Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal–oxide–semiconductor device with high-κ insulator  

作　　者：Xue Chen Zhi-Gang Wang Xi Wang James B Kuo 陈雪;汪志刚;王喜;James B Kuo(School of Information Science and Technology, Southwest Jiao Tong University, Chengdu 611756, China;＂National＂ Taiwan University, Talpei, China)

机构地区：[1]School of Information Science and Technology, Southwest Jiao Tong University, Chengdu 611756, China [2]"National" Taiwan University, Talpei, China

出　　处：《Chinese Physics B》2018年第4期529-535,共7页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.61404110);the National Higher-education Institution General Research and Development Project,China(Grant No.2682014CX097)

摘　　要：An improved vertical power double-diffused metal–oxide–semiconductor（DMOS） device with a p-region（P1） and high-κ insulator vertical double-diffusion metal–oxide–semiconductor（HKP-VDMOS） is proposed to achieve a better performance on breakdown voltage（BV）/specific on-resistance（Ron,sp） than conventional VDMOS with a high-κ insulator（CHK-VDMOS）.The main mechanism is that with the introduction of the P-region,an extra electric field peak is generated in the drift region of HKP-VDMOS to enhance the breakdown voltage.Due to the assisted depletion effect of this p-region,the specific on-resistance of the device could be reduced because of the high doping density of the N-type drift region.Meanwhile,based on the superposition of the depleted charges,a closed-form model for electric field/breakdown voltage is generally derived,which is in good agreement with the simulation result within 10% of error.An HKP-VDMOS device with a breakdown voltage of 600 V,a reduced specific on-resistance of 11.5 Ωm·cm^2 and a figure of merit（FOM）（BV^2/Ron,sp）of 31.2 MW·cm^-2 shows a substantial improvement compared with the CHK-VDMOS device.An improved vertical power double-diffused metal–oxide–semiconductor（DMOS） device with a p-region（P1） and high-κ insulator vertical double-diffusion metal–oxide–semiconductor（HKP-VDMOS） is proposed to achieve a better performance on breakdown voltage（BV）/specific on-resistance（Ron,sp） than conventional VDMOS with a high-κ insulator（CHK-VDMOS）.The main mechanism is that with the introduction of the P-region,an extra electric field peak is generated in the drift region of HKP-VDMOS to enhance the breakdown voltage.Due to the assisted depletion effect of this p-region,the specific on-resistance of the device could be reduced because of the high doping density of the N-type drift region.Meanwhile,based on the superposition of the depleted charges,a closed-form model for electric field/breakdown voltage is generally derived,which is in good agreement with the simulation result within 10% of error.An HKP-VDMOS device with a breakdown voltage of 600 V,a reduced specific on-resistance of 11.5 Ωm·cm^2 and a figure of merit（FOM）（BV^2/Ron,sp）of 31.2 MW·cm^-2 shows a substantial improvement compared with the CHK-VDMOS device.

关 键 词：SUPERPOSITION HKP-VDMOS breakdown voltage specific on-resistance 

分 类 号：TN303[电子电信—物理电子学]