CaSi_2O_2N_2:Ce/Tb、Eu叠层纤维膜的制备及其荧光性能研究  被引量:1

Synthesis and Property of CaSi_2O_2N_2:Ce/Tb, Eu Stacking Luminescence Fibers

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作  者:崔博[1] 贾巍[2] 陈振华 李耀刚[1] 张青红[1] 王宏志[1] CUI Bo;JIA Wei;CHEN Zhen-Hua;LI Yao-Gang;ZHANG Qing-Hong;WANG Hong-Zhi(State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China;Shanghai Institute of Space Power-sources, Shanghai 200245, China)

机构地区:[1]东华大学材料科学与工程学院纤维材料改性国家重点实验室,上海201620 [2]上海空间电源研究所,上海200245

出  处:《无机材料学报》2018年第4期403-408,共6页Journal of Inorganic Materials

基  金:国家自然科学基金(51572046;51603037);高等学校学科创新引智计划(111-2-04);上海市自然科学基金(15ZR1401200);上海市优秀学术带头人(16XD1400100);上海高校特聘教授(东方学者)岗位计划~~

摘  要:采用分步静电纺丝与气相还原氮化相结合的方法,通过控制纺丝液的组成和纺丝时间,制备了用于白光LED的CaSi_2O_2N_2:Ce/Tb、Eu叠层荧光纤维膜。采用SEM、TEM、XRD和PL等对材料进行了表征。样品在宏观上呈现完整薄膜状态,微观上保持纤维结构,TEM照片显示荧光纤维由小晶粒组成。XRD分析结果表明:1300℃氮化1 h可以得到CaSi_2O_2N_2晶型,稀土离子的掺入没有改变CaSi_2O_2N_2的主晶相。在近紫外激发光照射下,CaSi_2O_2N_2:Ce/Tb、Eu叠层纤维膜两侧具有不同发射光。激发光照射Eu离子掺杂面能够降低叠层纤维膜的发射光重复吸收。将制备的CaSi_2O_2N_2:Ce/Tb、Eu叠层荧光纤维膜封装于近紫外激发的LED芯片中,可以实现白光发射。By adjusting composition of spinning solution and spinning time, CaSi2O2N2:Ce/Tb, Eu stacking fluorescent fibers for white LEDs were prepared through multi-step electrospinning and gas-reduction procedures. The obtained samples were characterized by SEM, TEM, XRD, and PL. The obtained sample keeps fiber morphology, and assembles as film at macro level. TEM images show that the fluorescent fibers consist of nanoerystalline. XRD patterns demonstrate that CaSi2O2N2 crystal can be prepared through nitridizing at 1300℃ for 1 h, and its phase can be maintained after doping CeTb/Eu ions. Both sides of the CaSi2O2N2:Ce/Tb, Eu stacking fluorescent fiber mats emit different light under the N-UV excitation light. The Eu ion doping side exposed to the exciting light can effectively undercut the emitting light reabsorption process of the fiber-stacking mat. It demonstrates that white light will be emitted when CaSi2O2N2:Ce/Tb, Eu fluorescent fiber stacking mats are applied in a white light emitting diodes with N-UV chip.

关 键 词:叠层结构 静电纺丝 荧光纤维 氮氧化物 

分 类 号:TB34[一般工业技术—材料科学与工程]

 

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