高压熔体法生长高质量CdSe单晶  

Growth of High Quality CdSe Single Crystal by High-Pressure Melt Method

作　　者：陈诗静[1,2] 黄昌保[1] 倪友保[1] 吴海信[1] 王振友[1] CHEN Shiing;HUANG Changbao;NI Youbao;WU Haixin;WANG Zhenyou(Anhui Provincial Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, and Hefei Institutes of Physical Sciences, Chinese Academy of Sciences, Hefei 230031, China;University of Science and Technology of China, Hefei 230026, China)

机构地区：[1]中国科学院合肥物质科学研究院,安徽光学精密机械研究所,安徽省光子器件与材料重点实验室,合肥230031 [2]中国科学技术大学,合肥230026

出　　处：《硅酸盐学报》2018年第4期518-523,共6页Journal of The Chinese Ceramic Society

基　　金：中国科学院知识创新工程(CXJJ-16M128)资助项目

摘　　要：CdSe晶体是一种性能优异的非线性光学材料，但目前常规的生长方法很难生长出高质量单晶。本实验在理论推导的基础上，采用高压熔体法生长出了较大尺寸的CdSe晶体棒，并采用X射线衍射仪、能谱分析仪、腐蚀坑观察、Fourier变换红外光谱仪对单晶性能进行表征。结果表明：高压熔体法生长的CdSe单晶组分接近理想化学计量比（CdSe0.989），且具备结构完整、位错密度小（10^4/cm^2）、结晶质量高（FWHM≤0.1°）、吸收系数低（0.03cm^-1以内），有望用于非线性光学频率转换实验。It is difficult for conventional growth methods to prepare high quality CdSe single crystals. Based on the theoretical deduction, we obtained large crystals by a high-pressure melt growth method. The crystal samples were characterized by X-ray diffraction, etch-pit observation, energy dispersive spectroscopy and Fourier transform infrared spectroscopy, respectively. The results show that the crystal component has a little deviation of stoichiometric ratio （i.e., CdSe0.989）, small dislocations （i.e., 10^4/cm^2）, good crystalline integrity （i.e., FWHM≤0.1°） and low absorption coefficient （i.e., 〈 0.03 cm^-1）. The crystal grown by this method could be used in the nonlinear optical frequency conversion.

关 键 词：硒化镉晶体 高压熔体法 分解率 光学质量 

分 类 号：O782[理学—晶体学]