Effect of CHF3/Ar Gas Flow Ratio on Self-masking Subwavelength Structures Prepared on Fused Silica Surface  

作　　者：伍景军 叶鑫 HUANG Jin SUN Laixi ZENG Yong WEN Jibin GENG Feng YI Zao 蒋晓东 张魁宝 

机构地区：[1]State Key Laboratory Cultivation Base for Nonmetal Composite and Functional Materials, Southwest University of Science and Technology, Mianyang 621010, China [2]Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China [3]Joint Laboratory for Extreme Conditions Matter Properties, Southwest University of Science and Technology, Mianyang 621010, China

出　　处：《Journal of Wuhan University of Technology(Materials Science)》2018年第2期349-355,共7页武汉理工大学学报（材料科学英文版）

基　　金：Funded by the National Natural Science Foundation of China(Nos.61705204 and 51606158);the Laser Fusion Research Center Funds for Young Talents(No.LFRC-PD011)

摘　　要：Based on an advanced technology, randomly-aligned subwavelength structures（SWSs） were obtained by a metal-nanodot-induced one-step self-masking reactive-ion-etching process on a fused silica surface. Metal-fluoride（mainly ferrous-fluoride） nanodots induce and gather stable fluorocarbon polymer etching inhibitors in the reactive-ion-etching polymers as masks. Metal fluoride（mainly ferrous fluoride） is produced by the sputtering of argon plasma and the ion-enhanced chemical reaction of metal atoms. With an increase in CHF_3/Ar gas flow ratio, the average height of the SWSs increases, the number of SWSs per specific area increases and then decreases, and the optical transmittance of visible light increases and then decreases. The optimum CHF_3/Ar gas flow ratio for preparing SWSs is 1：5.Based on an advanced technology, randomly-aligned subwavelength structures（SWSs） were obtained by a metal-nanodot-induced one-step self-masking reactive-ion-etching process on a fused silica surface. Metal-fluoride（mainly ferrous-fluoride） nanodots induce and gather stable fluorocarbon polymer etching inhibitors in the reactive-ion-etching polymers as masks. Metal fluoride（mainly ferrous fluoride） is produced by the sputtering of argon plasma and the ion-enhanced chemical reaction of metal atoms. With an increase in CHF_3/Ar gas flow ratio, the average height of the SWSs increases, the number of SWSs per specific area increases and then decreases, and the optical transmittance of visible light increases and then decreases. The optimum CHF_3/Ar gas flow ratio for preparing SWSs is 1：5.

关 键 词：metal-induced self-masking one-step reactive ion etching subwavelength structure 

分 类 号：TB306[一般工业技术—材料科学与工程]