大功率分布反馈半导体激光器研究进展  

Research Progress of High Power Distributed Feedback Semiconductor Lasers

作　　者：李杨 冯源 李洋 张昕 岳光礼 王志伟 谢检来 王霞 郝永芹 Li Yang;Feng Yuan

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室

出　　处：《微纳电子技术》2018年第6期388-396,407,共10页Micronanoelectronic Technology

基　　金：总装预研基金

摘　　要：介绍了分布反馈半导体激光器（DFB-LD）的工作原理，分析了不同的光栅阶数及耦合机制对DFB-LD激光输出特性的影响。重点评述了大功率DFB-LD研究发展状况，从结构特性及技术手段等方面详细分析了不同技术方案的优势与不足：大功率二次外延DFB-LD对光栅和有效光场耦合较好，但二次外延对技术控制精度要求极高且会引入缺陷；表面金属光栅边发射DFl3-LD避免了二次外延，但制作金属光栅时会出现欧姆接触电阻大和阈值特性劣化等问题；大功率表面光栅面发射DFB-LD虽然在获得高功率高质量光束方面有很大优势，且避免了二次外延，但存在光栅的表面耦合系数较低等技术难题。最后总结分析大功率DFB-LD技术发展趋势，对其广阔的应用前景进行展望。The working principle of the distributed feedback semiconductor laser （DFB-LD） is introduced, and the influences of different grating orders and coupling mechanisms on the laser output characteristic of the DFB-LD are analyzed. The development of the high power DFB-LD is reviewed emphatically, and the advantages and disadvantages of different approaches are analyzed in detail in terms of structural characteristics and technical means. The high-power epitaxial regrowth DFB-LD can provide high efficient coupling between gratings and active optical field. However, the epitaxial regrowth has some shortcomings, such as high control precision of tech- nology and introducing defects. The surface-metal-grating edge-emission DFB-LD avoids epitaxial regrowth, however has some problems, such as large Ohmic contact resistance and threshold characteristic deterioration during the metal grating fabrication. The high power surface-grating surface-emission DFB-LD has great advantages in obtaining high power and high quality beams without epitaxial regrowth, but has some technical problems such as low surface coupling coefficient of the grating. Finally, the development trend of high power DFB-LD technology is summa- rized and analyzed, and its broad application is prospected.

关 键 词：半导体激光器 高功率 波长稳定性 分布反馈 光栅 二次外延 

分 类 号：TN248.4[电子电信—物理电子学]