提高等离子体密度对不同放电条件下逃逸电子行为对比分析  

Comparison of Runaway Behavior by Increasing Plasma Density under Different Discharge Conditions

作　　者：竹锦霞 Zhu Jinxia(School of Intelligent Manufacturing,Sichuan University of Arts and Science,Dazhou Sichuan 63500)

机构地区：[1]四川文理学院智能制造学院,四川达州635000

出　　处：《首都师范大学学报（自然科学版）》2018年第2期39-42,共4页Journal of Capital Normal University：Natural Science Edition

基　　金：四川省教育厅科研重点项目(15 ZA0321);四川省教育厅重点科研项目(18ZA0417)

摘　　要：利用硬X射线诊断系统,对比分析了提高等离子体密度对欧姆放电和低杂波电流驱动放电下逃逸电子行为的影响.实验结果表明:在欧姆放电平顶阶段提高等离子体密度能有效抑制强逃逸分布,然而在低杂波关断时提高等离子体密度并没有抑制电子逃逸,反而出现逃逸电子雪崩增长.根据不同逃逸产生机制对该现象进行了对比分析.By making use of the hard X-ray（ HXR） detection system,the effects of increasing plasma density on the behavior of runaway electrons had been studied during Omich discharge and lower hybrid current drive discharge. It was found that the runaway electron distribution can be suppressed during Ohmic discharge with increasing the plasma density. On the contrary,the avalanche phenomenon occurred by increasing plasma density when lower hybrid wave was switched off. The difference between the results was analyzed using two different generation mechanisms.

关 键 词：逃逸电子 等离子体密度 欧姆放电 低杂波电流驱动 

分 类 号：O53[理学—等离子体物理]