An investigation of the DC and RF performance of InP DHBTs transferred to RF CMOS wafer substrate  

作　　者：Kun Ren Jiachen Zheng Haiyan Lu Jun Liu Lishu Wu Wenyong Zhou Wei Cheng 

机构地区：[1]Key Laboratory for RF Circuits and Systems of Ministry of Education,Hangzhou Dianzi University,Hangzhou 310018,China [2]Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing 210016,China

出　　处：《Journal of Semiconductors》2018年第5期54-58,共5页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(No.61331006);the Natural Science Foundation of Zhejiang Province(No.Y14F010017)

摘　　要：This paper investigated the DC and RF performance of the In P double heterojunction bipolar transistors（DHBTs）transferred to RF CMOS wafer substrate.The measurement results show that the maximum values of the DC current gain of a substrate transferred device had one emitter finger,of 0.8μm in width and 5μm in length,are changed unobviously,while the cut-off frequency and the maximum oscillation frequency are decreased from 220to 171 GHz and from 204 to 154 GHz,respectively.In order to have a detailed insight on the degradation of the RF performance,small-signal models for the In P DHBT before and after substrate transferred are presented and comparably extracted.The extracted results show that the degradation of the RF performance of the device transferred to RF CMOS wafer substrate are mainly caused by the additional introduced substrate parasitics and the increase of the capacitive parasitics induced by the substrate transfer process itself.This paper investigated the DC and RF performance of the In P double heterojunction bipolar transistors（DHBTs）transferred to RF CMOS wafer substrate.The measurement results show that the maximum values of the DC current gain of a substrate transferred device had one emitter finger,of 0.8μm in width and 5μm in length,are changed unobviously,while the cut-off frequency and the maximum oscillation frequency are decreased from 220to 171 GHz and from 204 to 154 GHz,respectively.In order to have a detailed insight on the degradation of the RF performance,small-signal models for the In P DHBT before and after substrate transferred are presented and comparably extracted.The extracted results show that the degradation of the RF performance of the device transferred to RF CMOS wafer substrate are mainly caused by the additional introduced substrate parasitics and the increase of the capacitive parasitics induced by the substrate transfer process itself.

关 键 词：CMOS technology amplifier integrated circuits 

分 类 号：TN322.8[电子电信—物理电子学] TQ153[化学工程—电化学工业]