交织结构的耐单粒子瞬变压控振荡器  

Single-event transient tolerant voltage-controlled oscillator using interleaved structure

作　　者：韦援丰[1,2] 杨海钢 李天文[1] WEI Yuanfeng;YANG Haigang;LI Tianwen(Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, China;University of Chinese Academy of Sciences, Beijing 100049, China)

机构地区：[1]中国科学院电子学研究所,北京100190 [2]中国科学院大学,北京100049

出　　处：《国防科技大学学报》2018年第2期97-102,共6页Journal of National University of Defense Technology

基　　金：国家自然科学基金资助项目(61474120;61704173);北京市重点实验室开放课题基金资助项目(BKBD-2017KF05)

摘　　要：为提高辐照环境下振荡器工作的可靠性,提出一种交织结构的抗辐照设计加固压控振荡器(Voltage-Controlled Oscillator,VCO),该VCO由采用交织结构的延时单元构成,该延时单元支持多数表决功能,可以抑制单粒子瞬变的影响;该VCO环路中无须引入额外的专用表决模块,可以产生均匀的多相位输出。所提出的加固差分VCO是基于130 nm体硅互补金属氧化物半导体工艺设计的。模拟结果表明,所设计的加固VCO在100 fC^800 fC沉积电荷量的轰击范围内,其所产生的最大相位偏移不超过0.35 rad。In order to improve the operation reliability of oscillator,a novel radiation-hardened-by-design VCO（ voltage-controlled-oscillator）using interleaved structure was presented. The VCO consists of multi-stage delay cells which apply interleaved structure and can complete majority decision voter,so it is tolerant to single-event transient effect. Additionally,the VCO can generate symmetric multi-phase output as no additional module for majority decision voter is needed to be introduced in it. The radiation-harden differential VCO was implemented in a 130 nm bulk complementary metal oxide semiconductor process. Simulation results show that,when deposited charges range from 100 fC to 800 fC,the maximum phase displacement generated by a single simulated ion strike for the proposed VCO output is less than 0. 35 rad.

关 键 词：抗辐照设计加固 交织结构 单粒子瞬变 压控振荡器 

分 类 号：TN432[电子电信—微电子学与固体电子学]