基于硅基IPD技术的新型S波段带通滤波器设计  

Design of a Novel S-Band Bandpass Filter Based on Silicon Integrated Passive Device Technology

作　　者：方芝清 唐高弟[1] 吕立明[1] 曾荣[1] 李智鹏[1] Fang Zhiqing;Tang Gaodi;Lii Liming;Zeng Rong;Li Zhipeng(Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621900, China)

机构地区：[1]中国工程物理研究院电子工程研究所

出　　处：《半导体技术》2018年第5期347-352,共6页Semiconductor Technology

摘　　要：将无源器件内埋或集成在封装基板中,是射频系统级封装（SIP）的小型化面临的首要问题之一。基于硅基集成无源器件（IPD）技术,借鉴经典的级联四角元件（CQ）滤波器拓扑,提出一种四电感互耦结构。利用集总LC谐振器和分布式互感耦合原理,在交叉耦合节点处以加载电容的方式引入频变耦合节点,实现了一款新颖的S波段四阶带通滤波器,尺寸仅为1.5 mm×1 mm,其通带内最小插损约为-3.5 dB@2.8 GHz,-1 dB带宽为2.63~2.96 GHz,在带外形成两个传输零点位置：-41.5 dB@2.29 GHz和-26 dB@3.34 GHz。该滤波器结构形式新颖,可以整体集成到硅基板中,为射频系统级封装一体化集成提供支持。Embedding or integrating the passive devices into the package substrates is one of the key issues for the miniaturization of RF system in package（ SIP）. Based on the silicon integrated passive device（ IPD） technology,a 4-inductor mutual coupling structure was proposed by following the classic cascaded quadruplet（ CQ） filter topology. With the lumped LC resonator and distributed mutual coupling principle,a frequency-dependent coupling node was formed by loading a capacitor at the cross-coupled node. Finally a novel S-band 4-order bandpass filter with the size of 1. 5 mm × 1 mm was achieved. The measured minimum insert loss in the passband is about -3. 5 dB@ 2. 8 GHz and the -1 dB bandwidth in the passband is 2. 63-2. 96 GHz. The locations of transmission zeros are -41. 5 dB@ 2. 29 GHz and -26 dB@ 3. 34 GHz. The designed filter has a novel structure and can be integrated into the silicon substrate to support the integration of RF-SIP.

关 键 词：带通滤波器 集成无源器件(IPD) 系统级封装(SIP) 频变耦合 互感电感结构 

分 类 号：TN713.5[电子电信—电路与系统] TN304.12