DSSCs电池ZnWO_4薄膜制备及性能BatteryMon软件测试  

Preparation and performance of ZnWO_4 thin film DSSCs batterymon software testing

作　　者：王嫣 武海燕[2] WANG Yan;WU Hai-yan(Zhengzhou Institute of Technology,zhengzhou Hennan 450044,chin;China Railway Police College,zhengzhou Hennan 450000,china)

机构地区：[1]郑州工程技术学院,河南郑州450044 [2]铁道警察学院,河南郑州450000

出　　处：《电源技术》2018年第5期683-684,696,共3页Chinese Journal of Power Sources

基　　金：河南省科技厅科技攻关计划项目(162102210326);河南省科技厅软科学计划项目(152400410314);公安部技术研究计划项目(2016JSYJB38)

摘　　要：研究ZnWO_4薄膜在DSSCs电池中的光电特性,利用浸渍-提拉法制备ZnWO_4薄膜,利用扫描电子显微镜(SEM)、X射线衍射(XRD)、紫外可见吸收光谱(UV-vis)、电化学阻抗谱(EIS)和电流电压(I-V)等表征制备的ZnWO_4薄膜的结构,借助BatteryMon软件测试其光电性能。表征结果显示,利用浸渍-提拉法制备的ZnWO_4薄膜结晶性能良好,薄膜颗粒均匀,带隙为2.85 eV,是直接带隙半导体。浸渍-提拉法制备ZnWO_4薄膜组装的染料敏化太阳电池(DSSCs)短路电流密度达到0.15 mA/cm2,开路电压达到625 mV,电池的光电转换效率为0.037%The optical properties of ZnWO_4 films in the DSSCs cell are researched. ZnWO_4 thin films structure is prepared using the dip coating process, scanning electron microscopy（SEM）, X ray diffraction（XRD）, ultraviolet visible absorption spectroscopy（UV-vis）, electrochemical impedance spectroscopy（EIS） and current voltage（I-V）.The photovoltaic performance was tested with BatteryMon software. The characterization results showed that the crystalline properties of ZnWO_4 films prepared by dip coating, film uniformity, band gap of 2.85 eV, it is a direct band gap semiconductor. ZnWO_4 thin film self-assembly of fuel sensitized solar cell dip（DSSCs） short circuit current density reaches 0.15 mA/cm2, the open circuit voltage reaches 625 mV, and the photoelectric conversion efficiency is0.037%.

关 键 词：ZnWO4薄膜 DSSCS 结构表征 光电性能测试 BatteryMon软件 

分 类 号：TM914[电气工程—电力电子与电力传动]