新型无铅Na_(0.5)Y_(0.5)TiO_3铁电薄膜的制备及性能  

Preparation and Properties of a New Lead-free Na_(0.5)Y_(0.5)TiO_3 Ferroelectric Thin Film

作　　者：刘修锋 葛洋洋 葛大勇[1] 李佳慧 郭聪 代秀红[1] 刘保亭[1] LIU Xiufeng;GE Yangyang;GE Dayong;LI Jiahui;GUO Cong;DAI Xiuhong;LIU Baoting(Ferric Materials and Devices Research Institute, College of Physics Science ＆ Technology, Hebei University, Baoding 071002, China)

机构地区：[1]河北大学物理科学与技术学院铁性材料与器件研究所,保定071002

出　　处：《机械工程材料》2018年第5期35-39,共5页Materials For Mechanical Engineering

基　　金：河北省自然科学基金青年科学基金资助项目(206020315045);河北省教育厅高等学校科学技术研究项目(205020516524)

摘　　要：采用射频磁控溅射法在[001]取向的掺铌钛酸锶(Nb:STO)单晶衬底上制备Na_(0.5)Y_(0.5)TiO_3(NYT)铁电薄膜,研究了该铁电薄膜的物相组成、显微结构、铁电性能、电输运性能。结果表明:NYT薄膜具有[001]取向的外延结构,其表面平整,界面清晰,结晶质量良好;NYT薄膜具有铁电性能,其剩余极化强度为0.3μC·cm^(-2),矫顽场为178kV·cm^(-1);NYT薄膜/电极界面存在肖特基势垒,反偏状态的肖特基结能够显著降低NYT薄膜的漏电流密度,提高其耐压强度,肖特基结处于正偏状态时的电流传导符合陷阱态控制的空间电荷限制电流机制。Na0.5Y0.5TiO3（NYT） ferroelectric thin film was prepared on the substrate of single-crystal niobium doped strontium titanate（Nb：STO）with[001]orientation by radio frequency magnetron sputtering.The phase composition,microstructure,ferroelectric properties and electrical transport properties of the ferroelectric thin film were studied.The results show that the NYT thin film had a[001] oriented epitaxial structure,the surface was smooth,the interface was clear,and the crystalline quality was good.The NYT thin film had ferroelectric properties with remanent polarization of 0.3μC·cm^-2 and coercive field of 178 kV·cm^-1.The Schottky barrier was found at the NYT thin film/electrode interface.The reverse-biased Schottky junction decreased the leakage current density significantly and increased the breakdown electric field strength of NYT thin film.The current conduction in the forward-biased state of Schottky junction complied with the space charge limited current mechanism controlled by trapping state.

关 键 词：外延生长 电滞回线 压电响应 肖特基势垒 

分 类 号：O469[理学—凝聚态物理]