基于《TiO_2基阻变存储器件性能》的教学实践探索  

Effects of Oxygen Partial Pressure on the Properties of TiO_2 Based Re RAM

作　　者：李红霞[1] 邹永应 杨臻婷 季振国[1] LI Hong-xia;ZOU Yong-ying;YANG Zhen-ting;JI Zhen-guo(School of Material and Environmental Engineering,Hangzhou Dianzi University,Hangzhou 310018,China)

机构地区：[1]杭州电子科技大学材料与环境工程学院,杭州310018

出　　处：《教育教学论坛》2018年第24期159-160,共2页Education And Teaching Forum

摘　　要：采用直流磁控溅射法在重掺硅(n+-Si)上制备TiO_2薄膜,通过电子束蒸发镀膜仪在TiO_2薄膜上沉积Au上电极,获得Au/TiO_2/n^+-Si结构的阻变存储器件。研究了氧分压对薄膜结晶性能及对器件电阻开关特性的影响,同时研究了器件的高低阻态电阻值及其高低阻值比随氧分压的变化情况。TiO2 thin films were deposited on n＋-Si wafer by DC magnetron sputtering and the Au electrodes were evaporated on TiO2/n-＋-Si by electric beam evaporation to get Au/TiO2/n-＋-Si Re RAM. The effects of oxygen partial pressure on the crystalline structure of the TiO2 thin films and the resistive switching characteristics of the fabricated devices were investigated. The variations of high resistance state and low resistance state resistances of the devices were also studied.

关 键 词：TIO2薄膜 电阻开关 氧分压 

分 类 号：G642.0[文化科学—高等教育学]