采用快速升温烧结方法生长Tl-2223超导薄膜的研究  

Fabrication of Tl-2223 superconducting thin films by rapid heating-up sintering technology

作　　者：陈名贤[1] 黄国华[1] 黄佳[1] 蒙美娘 蒋艳玲[1] 唐平英[1] 谢清连[1] Chen Mingxian;Huang Guohua;Huang Jia;Meng Meiniang;Jiang Yanling;Tang Pingying;Xie Qinglian(College of Physics and Electronic Engineering, Guangxi Teachers Education University, Nanning 530299, Chin)

机构地区：[1]广西师范学院物理与电子工程学院,南宁530299

出　　处：《低温与超导》2018年第6期32-36,共5页Cryogenics and Superconductivity

基　　金：国家自然科学基金项目(51561005;51062001);广西自然科学基金项目(2015jj DA10001);广西教育厅项目(KY2015ZD076);广西高校新型电功能材料重点实验室开放课题(DGN201702)

摘　　要：本文采用磁控溅射和快速升温烧结方法在(00l)取向的铝酸镧(LAO)基片上制备Tl-2223超导薄膜,研究了Tl含量不同的陪烧靶对Tl-2223薄膜晶体结构的影响。XRD测试表明,陪烧靶中Tl含量是制备高质量Tl系薄膜的关键环节,采用合适配比的陪烧靶可制备出纯c轴取向Tl-2223超导薄膜。SEM测试结果表明,采用该工艺制备的薄膜为层状生长结构,其表面形貌平整、致密。经过在氧环境下热处理后的Tl-2223薄膜具有较好的电学性能,其临界转变温度Tc达到118K,临界电流密度Jc为1.2MA/cm2(77K,0T)。In this paper, Tl -2223 superconducting thin films on （001） -oriented lanthanum aluminate substrates were prepared by magnetron sputtering and rapid heating - up sintering technology （RHST）. The effects of different Tl content in an- nealing target on the crystal structure of Tl -2223 thin films were studied. The XRD test shows that the Tl content in annealing target is the key to the preparation of high quality Tl - based films, and the purely c - oriented Tl - 2223 films can be prepared by using suitable proper proportion of annealing target. The results of SEM test show that the films prepared by this process are lay- ered growth structure with smooth and dense surface morphology. The Tl - 2223 fihn after heat treatment in 02 has good electrical properties with a high Tc of 118K, and a Jc of 1.2MA/cm2 （77K, 0T）.

关 键 词：T1-2223超导薄膜 c轴取向生长 快速升温烧结方法 

分 类 号：O484.1[理学—固体物理]