采用微波焙烧预处理—硫酸浸出工艺从废弃液晶面板中回收铟  

Recovery of Indium From Waste Liquid Crystal Panel by Microwave Roasting-Sulfuric Acid Leaching

作　　者：嵇佳伟 关杰[1] 苏瑞景[1] JI Jiawei;GUAN Jie;SU Ruijing(School of Environmental and Material Engineering, Shanghai Polytechnic University, Shanghai 201209,China)

机构地区：[1]上海第二工业大学环境与材料工程学院,上海201209

出　　处：《湿法冶金》2018年第3期202-206,共5页Hydrometallurgy of China

基　　金：国家自然科学基金资助项目(51678353);上海市自然科学基金资助项目(15ZR1416800);上海张江国家自主创新示范区专项发展资金重点项目(201505-QP-B108-006);浦东新区科技发展基金资助项目(PKJ2015-C07&PKJ2015-C14);上海第二工业大学青年教师培养科研项目(央财)(B50YC150005-4);上海第二工业大学研究生项目基金资助(A01GY16F030);上海第二工业大学培育学科资助项目(XXKPY1601)

摘　　要：研究了采用微波焙烧预处理—硫酸浸出工艺从废弃液晶显示面板中回收铟,考察了相关因素对铟浸出率的影响。结果表明:在微波焙烧温度300℃、焙烧时间4min、添加剂用量500g/kg条件下对废弃液晶面板进行处理,然后用5mol/L硫酸溶液,在90℃下浸出90min,控制液固体积质量比为8mL/g,则铟浸出率达92.3%。研究结果可为废弃液晶面板的资源化提供技术支持。Recovery of indium from waste liquid crystal display panel by microwave roasting-sulfuric acid leaching process was studied.The effects of microwave roasting time,roasting temperature,sulfuric acid concentration,additive dosage,leaching temperature and time,liquid-to-solid ratio on leaching rate of indium were investigated.The results show that the waste liquid crystal panel is pretreated under the conditions of microwave roasting temperature of 300 ℃,roasting time of 4 min and additive dosage of 500 g/kg,then is leached for 90 min at 90 ℃and liquid-to-solid ratio of 8 mL/g using sulfuric acid of 5 mol/L,the indium leaching rate reaches 92.3%.The result can provide favorable technical support for the reuse of waste liquid crystal panel.

关 键 词：微波焙烧 资源化 液晶显示面板 铟 浸出 

分 类 号：TF803.21[冶金工程—有色金属冶金] TF843