窄线宽1064 nm分布布拉格反射半导体激光器  

Narrow Linewidth 1064 nm Distributed Bragg Reflector Semiconductor Laser

作　　者：贾宝山 王皓 李爱民 王梦鹤 都继瑶 李辉 李再金 薄报学 曲轶 Jia Baoshan;Wang Hao;Li Aimin;Wang Menghe;Du Jiyao;Li Hui;Li Zaijin;Bo Baoxue;Qu Yi(National Key Laboratory on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, Jilin 130022, China;~ School of Physics and Electronic Engineering, Hainan Normal University, Haikou , Hainan 571158, Chin;Quality Control and Evaluation Center, Changchun University of Science and Technology , Changchun, Jilin 130022, China)

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022 [2]长春理工大学质量监控与评估中心,吉林长春130022 [3]海南师范大学物理与电子工程学院,海南海口571158

出　　处：《中国激光》2018年第5期35-39,共5页Chinese Journal of Lasers

基　　金：国家自然科学基金联合基金(U1330136);2015年吉林省择优资助博士后科研项目

摘　　要：1064nm分布布拉格反射(DBR)半导体激光器具有窄线宽、输出稳定的特性,在自由空间激光通信用种子光源等方面具有广阔的应用前景。设计了一种单模、窄线宽的1064nm DBR半导体激光器,利用金属有机化合物气相沉积技术生长出InGaAs应变量子阱半导体激光器材料,并制备出腔长为1200μm的脊型波导1064nm DBR半导体激光器。当注入电流为70mA时,室温下该激光器的连续输出功率可达到7mW,3dB光谱线宽为0.12nm。The 1064 nm distributed Bragg reflector（DBR）semiconductor laser has the characteristics of narrow linewidth and stable output,and it has a broad application prospect in the field of free space laser communication used as seed light source.A single mode and narrow linewidth 1064 nm DBR semiconductor laser is designed.Metalorganic chemical vapor deposition（MOCVD）technique is used to grow InGaAs strained quantum well laser material,and a ridge waveguide 1064 nm DBR semiconductor laser with the cavity length of 1200μm is fabricated.When injection current is 70 mA,the continuous output power of the laser can reach 7 mW,and 3 dB spectral linewidth of the laser is 0.12 nm at room temperature.

关 键 词：激光器 1064nm半导体激光器 分布布拉格反射激光器 单模激光器 脊型波导 窄线宽 

分 类 号：TN248.4[电子电信—物理电子学]