Superconductivity of bilayer titanium/indium thin film grown on SiO2/Si(001)  

作　　者：Zhao-Hong Mo Chao Lu Yi Liu Wei Feng Yun Zhang Wen Zhang Shi-Yong Tan Hong-Jun Zhang Chun-Yu Guo Xiao-Dong Wang Liang Wang Rui-Zhu Yang Zhong-Guo Ren Xie-Gang Zhu Zhong-Hua Xiong Qi An Xin-Chun Lai 莫钊洪;路超;刘毅;冯卫;张云;张文;谭世勇;张宏俊;郭春煜;汪小冬;王亮;杨蕊竹;任忠国;朱燮刚;熊忠华;安琪;赖新春(Institute of Materials, China Academy of Engineering Physics, Jiangyou 621908, China;Department of Engineering and Applied Physics, School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China;Zhejiang University, Hangzhou 310058, China;China Academy of Engineering Physics, Mianyang 621000, China)

机构地区：[1]Institute of Materials,China Academy of Engineering Physics,Jiangyou 621908,China [2]Department of Engineering and Applied Physics,School of Physical Sciences,University of Science and Technology of China,Hefei 230026,China [3]Zhejiang University,Hangzhou 310058,China [4]China Academy of Engineering Physics,Mianyang 621000,China

出　　处：《Chinese Physics B》2018年第6期429-433,共5页中国物理B（英文版）

摘　　要：Bilayer superconducting films with tunable transition temperature（Tc） are a critical ingredient to the fabrication of high-performance transition edge sensors. Commonly chosen materials include Mo/Au, Mo/Cu, Ti/Au, and Ti/Al systems. Here in this work, titanium/indium（Ti/In） bilayer superconducting films are successfully fabricated on SiO2/Si（001）substrates by molecular beam epitaxy（MBE）. The success in the epitaxial growth of indium on titanium is achieved by lowering the substrate temperature to-150？C during indium evaporation. We measure the critical temperature under a bias current of 10 μA, and obtain different superconducting transition temperatures ranging from 645 m K to 2.7 K by adjusting the thickness ratio of Ti/In. Our results demonstrate that the transition temperature decreases as the thickness ratio of Ti/In increases.Bilayer superconducting films with tunable transition temperature（Tc） are a critical ingredient to the fabrication of high-performance transition edge sensors. Commonly chosen materials include Mo/Au, Mo/Cu, Ti/Au, and Ti/Al systems. Here in this work, titanium/indium（Ti/In） bilayer superconducting films are successfully fabricated on SiO2/Si（001）substrates by molecular beam epitaxy（MBE）. The success in the epitaxial growth of indium on titanium is achieved by lowering the substrate temperature to-150？C during indium evaporation. We measure the critical temperature under a bias current of 10 μA, and obtain different superconducting transition temperatures ranging from 645 m K to 2.7 K by adjusting the thickness ratio of Ti/In. Our results demonstrate that the transition temperature decreases as the thickness ratio of Ti/In increases.

关 键 词：titanium/indium thin film molecular beam epitaxy （MBE） proximity effect 

分 类 号：O4[理学—物理]