Controllable growth of GeSi nanostructures by molecular beam epitaxy  

作　　者：Yingjie Ma Tong Zhou Zhenyang Zhong Zuimin Jiang 

机构地区：[1]State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences [2]State Key Laboratory of Surface Physics,Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Department of Physics,Fudan University [3]School of Physics and Optoelectronic Engineering,Shandong University of Technology

出　　处：《Journal of Semiconductors》2018年第6期51-65,共15页半导体学报（英文版）

基　　金：Project supports by the Natural Science Foundation of China(Nos.61605232,61674039);the Open Research Project of State Key Laboratory of Surface Physics from Fudan University(Nos.KF2016_15s,KF2017_05)

摘　　要：We present an overview on the recent progress achieved on the controllable growth of diverse GeSi al- loy nanostructures by molecular beam epitaxy. Prevailing theories for controlled growth of Ge nanostructures on patterned as well as inclined Si surfaces are outlined firstly, followed by reviews on the preferential growth of Ge nanoislands on patterned Si substrates, Ge nanowires and high density nanoislands grown on inclined Si surfaces, and the readily tunable Ge nanostructures on Si nanopillars. Ge nanostructures with controlled geometries, spatial distributions and densities, including two-dimensional ordered nanoislands, three-dimensional ordered quantum dot crystals, ordered nanorings, coupled quantum dot molecules, ordered nanowires and nanopillar alloys, are dis- cussed in detail. A single Ge quantum dot-photonic crystal microcavity coupled optical emission device demon- stration fabricated by using the preferentially grown Ge nanoisland technique is also introduced. Finally, we sum- marize the current technology status with a look at the future development trends and application challenges for controllable growth of Ge nanostructures.We present an overview on the recent progress achieved on the controllable growth of diverse GeSi al- loy nanostructures by molecular beam epitaxy. Prevailing theories for controlled growth of Ge nanostructures on patterned as well as inclined Si surfaces are outlined firstly, followed by reviews on the preferential growth of Ge nanoislands on patterned Si substrates, Ge nanowires and high density nanoislands grown on inclined Si surfaces, and the readily tunable Ge nanostructures on Si nanopillars. Ge nanostructures with controlled geometries, spatial distributions and densities, including two-dimensional ordered nanoislands, three-dimensional ordered quantum dot crystals, ordered nanorings, coupled quantum dot molecules, ordered nanowires and nanopillar alloys, are dis- cussed in detail. A single Ge quantum dot-photonic crystal microcavity coupled optical emission device demon- stration fabricated by using the preferentially grown Ge nanoisland technique is also introduced. Finally, we sum- marize the current technology status with a look at the future development trends and application challenges for controllable growth of Ge nanostructures.

关 键 词：Ge SI molecular beam epitaxy NANOSTRUCTURES CONTROLLABLE patterned substrates inclinedsurfaces preferential growth 

分 类 号：TN304[电子电信—物理电子学]