Recent progress in GeSn growth and GeSn-based photonic devices  

作　　者：Jun Zheng Zhi Liu Chunlai Xue Chuanbo Li Yuhua Zuo Buwen Cheng Qiming Wang 

机构地区：[1]Institute of Semiconductors,Chinese Academy of Sciences [2]College of Materials Science and Optoelectronic Technology,University of Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2018年第6期76-81,共6页半导体学报（英文版）

基　　金：Project supported by the Beijing Natural Science Foundation(No.4162063);the Youth Innovation Promotion Association of CAS(No.2015091)

摘　　要：The GeSn binary alloy is a new group IV material that exhibits a direct bandgap when the Sn content ex- ceeds 6%. It shows great potential for laser use in optoelectronic integration circuits （OEIC） on account of its low light emission efficiency arising from the indirect bandgap characteristics of Si and Ge. The bandgap of GeSn can be tuned from 0.6 to 0 eV by varying the Sn content, thus making this alloy suitable for use in near-infrared and mid-infrared detectors. In this paper, the growth of the GeSn alloy is first reviewed. Subsequently, GeSn photode- tectors, light emitting diodes, and lasers are discussed. The GeSn alloy presents a promising pathway for the mono- lithic integration of Si photonic circuits by the complementary metal-oxide-semiconductor （CMOS） technology.The GeSn binary alloy is a new group IV material that exhibits a direct bandgap when the Sn content ex- ceeds 6%. It shows great potential for laser use in optoelectronic integration circuits （OEIC） on account of its low light emission efficiency arising from the indirect bandgap characteristics of Si and Ge. The bandgap of GeSn can be tuned from 0.6 to 0 eV by varying the Sn content, thus making this alloy suitable for use in near-infrared and mid-infrared detectors. In this paper, the growth of the GeSn alloy is first reviewed. Subsequently, GeSn photode- tectors, light emitting diodes, and lasers are discussed. The GeSn alloy presents a promising pathway for the mono- lithic integration of Si photonic circuits by the complementary metal-oxide-semiconductor （CMOS） technology.

关 键 词：GeSn material growth Si photonics optoelectronic integration 

分 类 号：TN36[电子电信—物理电子学]