长脉冲激光辐照Si-APD温度演化过程的数值模拟与实验研究  

Numerical Simulation and Experimental Study of Temperature Evolution of Si-APD Irradiated by Long-Pulse Laser

作　　者：董渊[1,2] 王頔[2] 魏智[2] 符泰然[1] Dong Yuan;Wang Di;Wei Zhi;Fu Tairan(Key Laboratory for Thermal Science and Power Engineering of Ministry of Education, Beijing Key Laboratory of CO2 Utilization and Reduction Technology, Department of Energy and Power Engineering Tsinghua University, Beijing 100084, China;Jilin Key Laboratory of Solid Laser Technology and Application, Changchun University of Science and Technology Changchun, Jilin 130022, China)

机构地区：[1]清华大学能源与动力工程系热科学与动力工程教育部重点实验室,CO2资源利用与减排技术北京市重点实验室,北京100084 [2]长春理工大学吉林省固体激光技术与应用重点实验室,吉林长春130022

出　　处：《光学学报》2018年第5期171-176,共6页Acta Optica Sinica

基　　金：国家自然科学基金(51576110)

摘　　要：针对1064nm长脉冲激光辐照硅雪崩光电二极管(Si-APD)过程中所引起的温升变化规律进行了理论与实验研究。在考虑Si-APD多层结构的前提下,建立了二维轴对称热传导模型,据此进行了不同条件下的模拟仿真研究,并开展了长脉冲激光辐照Si-APD的温升实验研究。模拟仿真结果与实验结果相一致,均表明长脉冲激光与Si-APD相互作用引起的温升是由入射激光的能量密度和脉冲宽度共同决定的。The change of temperature rise caused by 1064 nm long-pulse laser irradiation on Si avalanche photodiode（Si-APD）is studied theoretically and experimentally.Considering the Si-APD multilayer structure,we establish a two-dimensional axisymmetric heat conduction model,and simulations under different conditions are carried out.We carry out the experimental study on temperature rise of Si-APD irradiated by long-pulse laser.The simulation results are consistent with the experimental results,which shows that the temperature rise caused by the interaction between long-pulse laser and Si-APD is determined by the energy density and pulse width of incident laser.

关 键 词：激光光学 长脉冲激光 激光辐照 硅雪崩光电二极管 多层结构 

分 类 号：O436[机械工程—光学工程]