Dual-polarization wavelength conversion of 16-QAM signals in a single silicon waveguide with a lateral p-i-n diode[Invited]  

作　　者：FRANCESCO DA Ros ANDRZEJ GAJDA ERIK LIEBIG EDSON P.DA SILVA ANNA PECZEK PETER D.GIROUARD ANDREAS MAI KLAUS PETERMANN LARS ZIMMERMANN MICHAEL GALILI LEIF K.OXENLOWE 

机构地区：[1]DTU Fotonik,Technical University of Denmark,DK-2800 Kongens Lyngby,Denmark [2]IHP,Im Technologiepark 25,15236 Frankfurt(Oder),Germany [3]IHP Solutions GmbH,Im Technologiepark 25,15236 Frankfurt(Oder),Germany [4]Institut for Hochfrequenz-und Halbleiter-Systemtechnologien,TU Berlin,Einsteinufer 25,10587 Berlin,Germany [5]AMETEK CTS Europe GmbH,L unener StraBe 211-212,59174 Kamen,Germany

出　　处：《Photonics Research》2018年第5期I0048-I0054,共7页光子学研究（英文版）

基　　金：Danmarks Grundforskningsfond(DNRF)(DNRF123);Det Frie Forskningsr?d(DFF)(DFF-4005-00558B);Deutsche Forschungsgemeinschaft(DFG)(PE319/36.1,SFB 787,ZI 1283/-1)

摘　　要：A polarization-diversity loop with a silicon waveguide with a lateral p-i-n diode as a nonlinear medium is used to realize polarization insensitive four-wave mixing. Wavelength conversion of seven dual-polarization 16-quadrature amplitude modulation(QAM) signals at 16 GBd is demonstrated with an optical signal-to-noise ratio penalty below 0.7 dB. High-quality converted signals are generated thanks to the low polarization dependence(≤0.5 dB) and the high conversion efficiency(CE) achievable. The strong Kerr nonlinearity in silicon and the decrease of detrimental free-carrier absorption due to the reverse-biased p-i-n diode are key in ensuring high CE levels.A polarization-diversity loop with a silicon waveguide with a lateral p-i-n diode as a nonlinear medium is used to realize polarization insensitive four-wave mixing. Wavelength conversion of seven dual-polarization 16-quadrature amplitude modulation （QAM） signals at 16 GBd is demonstrated with an optical signal-to-noise ratio penalty below 0.7 dB. High-quality converted signals are generated thanks to the low polarization dependence （≤0.5 dB） and the high conversion efficiency （CE） achievable. The strong Kerr nonlinearity in silicon and the decrease of detrimental free-carrier absorption due to the reverse-biased p-i-n diode are key in ensuring high CE levels.

关 键 词：Invited Dual-polarization wavelength conversion of 16-QAM signals in a single silicon waveguide with a lateral p-i-n diode QAM 

分 类 号：TN1[电子电信—物理电子学]