GeC film with high substitutional carbon concentration formed by ion implantation and solid phase epitaxy for strained Ge n-MOSFETs  

作　　者：Bingxin ZHANG Xia AN Xiangyang HU Ming LI Xing ZHANG Ru HUANG 

机构地区：[1]Key Laboratory of Microelectronie Devices and Circuits,Institute of Microelectronics,Peking University,Beijing 100871,China

出　　处：《Science China(Information Sciences)》2018年第6期255-257,共3页中国科学（信息科学）（英文版）

基　　金：National Natural Science Foundation of China(Grant Nos.61421005,61534004,60806033,61474004);National High Technology Research and Development Program of China(Grant No.2015AA016501);National Key Research and Development Plan(Grant No.2016YFA0200504)

摘　　要：Dear editor,Ge is considered as a promising channel material to replace Si because of its high carrier mobility than Si and compatibility with conventional Si process[1–3].Strain engineering has been widely used in Si-based devices and can also be adopted

关 键 词：GeC film with high substitutional carbon concentration formed by ion implantation and solid phase epitaxy for strained Ge n-MOSF HRTEM SPE 

分 类 号：TP2[自动化与计算机技术—检测技术与自动化装置]