GaZn-VZn acceptor complex defect in Ga-doped ZnO  

作　　者：AiHua Tang ZengXia Mei YaoNan Hou LiShu Liu Vishnukanthan Venkatachalapathy Alexander Azarov Andrej Kuznetsov XiaoLong Du 

机构地区：[1]Key Laboratory for Renewable Energy, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China [2]Department of Physics, Centre for Materials Science and Nanotechnology, University ofOslo, Oslo N-0316, Norway [3]School of Physieal Sciences, University of Chinese Academy of Sciences, Beijing 100049, China

出　　处：《Science China(Physics,Mechanics & Astronomy)》2018年第7期67-72,共6页中国科学：物理学、力学、天文学（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grants Nos.11674405,and 11675280)

摘　　要：Gallium （Ga）-doped ZnO is regarded as a promising plasmonic material with a wide range of applications in plasmonics. In this study, zinc self-diffusion experiments are adopted to disclose the nature of the dominant compensating defect in Ga-doped ZnO isotopic heterostructures. The （GaZn-VZ.）- complex defect, instead of the isolated VZn^2-, is identified as the predominant compensating acceptor center responsible for the low donor doping efficiency. The comparative diffusion experiments operated by the secondary ion mass spectrometry reveal a -0.78 eV binding energy of this complex defect, which well matches the electrical activation energy derived from the temperature-dependent Hall effect measurements （-（0.82±0.02） eV）. These findings contribute to an essential understanding of the （GaZn-VZn）- complex defect and the potential engineering routes of heavily Ga-doped ZnO.Gallium(Ga)-doped Zn O is regarded as a promising plasmonic material with a wide range of applications in plasmonics. In this study, zinc self-diffusion experiments are adopted to disclose the nature of the dominant compensating defect in Ga-doped Zn O isotopic heterostructures. The(Ga_(Zn)-V_(Zn))^- complex defect, instead of the isolated V_(Zn)^(2-), is identified as the predominant compensating acceptor center responsible for the low donor doping efficiency. The comparative diffusion experiments operated by the secondary ion mass spectrometry reveal a ~0.78 e V binding energy of this complex defect, which well matches the electrical activation energy derived from the temperature-dependent Hall effect measurements(^(0.82±0.02) e V). These findings contribute to an essential understanding of the(Ga_(Zn)-V_(Zn))^- complex defect and the potential engineering routes of heavily Ga-doped ZnO.

关 键 词：Ga-doped ZnO complex defect SELF-DIFFUSION 

分 类 号：O469[理学—凝聚态物理]