POCl_3掺杂对PNP管特性的影响研究  

Research of POCl_3 Doping Effecting on PNP Transistor Characteristics

作　　者：冯霞 梁涛[2] FENG Xia;LIANG Tao(CETC Chongqing Acoustic-Optic-Electronic Co. , Ltd. , Chongqing 401332, P. R. China;Sichuan Institute of Solid-State Circuits, China Electronics Technology Group Corp. , Chongqing 400060, P. R. China)

机构地区：[1]中电科技集团重庆声光电有限公司,重庆401332 [2]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2018年第3期425-428,共4页Microelectronics

摘　　要：PNP管的结构是由P型发射区、N型基区、P型集电区组成的三层两结。PNP管的基区宽度和基区掺杂对PNP管电特性的影响很大。在常规IC工艺中,通常采用先做试片的方式来确定基区的磷掺杂扩散时间,工艺加工效率低。为了解决这个问题,从磷源POCl3的温度、扩散时间两方面入手,对PNP管的电流增益β进行了实验研究。结果表明,在POCl3温度为(20±1)℃、预扩散时间为(46±2)min、β不小于80的条件下,PNP管的β变化量小于50%。该研究用于实际PNP管的制造工艺中,工艺加工效率提高了100%。PNP transistor was a structure with three layers and two junctions which consisted of P-type emitter,N-type base and P-type collector.The PNP transistor＇s base width and doping played an important role in its characteristics.In conventional semiconductor process,the diffusion time of base phosphorus doping was measured by test wafer,which had a very bad influence on the efficiency of research and production.To solve this problem,the influences of the phosphorus source（phosphorus oxychloride：POCl3）temperature and the phosphorus diffusion time on the gain（β）of PNP transistor were studied by experiments.The experimental results showed that theβtolerance range could be controlled at less than 50% under the conditions that the phosphorus source temperature was（20±1）℃ and the phosphorus diffusion time was（46±2）min whileβwas not less than 80.These results could be used in the manufacturing of PNP transistor,and the processing efficiency would be improved by 100%.

关 键 词：PNP管 POCl3 基区掺杂 预扩散 扩散时间 

分 类 号：TN305.3[电子电信—物理电子学] TN322.8