Strong Influence of Temperature and Vacuum on the Photoluminescence of In0.3Ga0.7As Buried and Surface Quantum Dots  

作　　者：Guodong WANG Huiqiang JI Junling SHEN Yonghao XU Xiaolian LIU Ziyi FU 

机构地区：[1]School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, China [2]School of Electrical Engineering and Automation, Henan Polytechnic University, Jiaozuo 454000, China

出　　处：《Photonic Sensors》2018年第3期213-219,共7页光子传感器（英文版）

基　　金：The authors gratefully acknowledge the supports from the National Natural Science Foundation of China （Grant No. U1304608）, the Project of Henan Provincial Department of Science and Technology （Grant No. 182102410047）, and the Program of Henan Polytechnic University （Grant No. T2015-3）.

摘　　要：The strong influences of temperature and vacuum on the optical properties of In0.3Ga0.7As surface quantum dots （SQDs） are systematically investigated by photoluminescence （PL） measurements. For comparison, optical properties of buried quantum dots （BQDs） are also measured. The line-width, peak wavelength, and lifetime of SQDs are significantly different from the BQDs with the temperature and vacuum varied. The differences in PL response when temperature varies are attributed to carrier transfer from the SQDs to the surface trap states. The obvious distinctions in PL response when vacuum varies are attributed to the SQDs intrinsic surface trap states inhibited by the water molecules. This research provides necessary information for device application of SQDs as surface-sensitivity sensors.The strong influences of temperature and vacuum on the optical properties of In0.3Ga0.7As surface quantum dots （SQDs） are systematically investigated by photoluminescence （PL） measurements. For comparison, optical properties of buried quantum dots （BQDs） are also measured. The line-width, peak wavelength, and lifetime of SQDs are significantly different from the BQDs with the temperature and vacuum varied. The differences in PL response when temperature varies are attributed to carrier transfer from the SQDs to the surface trap states. The obvious distinctions in PL response when vacuum varies are attributed to the SQDs intrinsic surface trap states inhibited by the water molecules. This research provides necessary information for device application of SQDs as surface-sensitivity sensors.

关 键 词：Surface quantum dots PHOTOLUMINESCENCE TEMPERATURE VACUUM InGaAs 

分 类 号：O484[理学—固体物理] TN304.12[理学—物理]