Na或Cu掺杂对Si/NiO异质结的光电性能影响  

Optical and Electrical Properties of Si/NiO Heterojunctions with and Without Na or Cu Doping

作　　者：李彤[1] 王铁钢[2] 范其香[2] 刘真真[1] 王雅欣[1] 赵新为[3] LI Tong;WANG Tie-gang;FAN Qi-xiang;LIU Zhen-zhen;WANG Ya-xin;ZHAO Xin-wei(College of Electronic Engineering, Tianjin University of Technology and Education, Tianjin 300222, China;College of Mechanical Engineering, Tianjin University of Technology and Education, Tianjin 300222, China;Department of Physics, Tokyo University of Science, Japan)

机构地区：[1]天津职业技术师范大学电子工程学院,天津300222 [2]天津职业技术师范大学机械工程学院,天津300222 [3]东京理科大学物理系

出　　处：《发光学报》2018年第6期784-789,共6页Chinese Journal of Luminescence

基　　金：国家自然科学基金(51301181;51501130);天津市高等学校创新团队培养计划(TD12-5043);天津市应用基础与前沿技术研究计划重点项目(15JCZDJC39700);天津职业技术师范大学人才计划资助项目(RC14-53;RC14-54);天津市科技特派员项目(16JCTPJC49500);天津市科委科技发展战略项目(15JCYBJC52200)资助~~

摘　　要：利用磁控溅射方法制备了引入Na或Cu元素前后Si/NiO异质结。实验结果表明,Na元素引入后的Si/NiO∶Na异质结的整流特性最佳。此时,Si/NiO∶Na异质结光学透过率可以达到70%,这可能是由于Si/NiO∶Na异质结的结晶质量较优、薄膜内缺陷少所致。Si/NiO∶Na异质结I-V曲线的拟合结果显示界面态状态也会影响其整流特性。而Si/NiO和Si/NiO∶Cu异质结都没能获得较好的整流特性,可能是薄膜内缺陷增多所致。这一结论得到了XRD、SEM、AFM和UV结果的支持。The Si/NiO heterojunctions with and without Na or Cu doping were prepared by the magnetron sputtering method. The best rectifying characteristics appears in the Si/NiO∶ Na heterojunction,where the average optical transmittance can reach to 70% in the visible range,which may be explained by the reduced defects due to the improved crystallization. The fitted I-V curve of Si/NiO∶ Na heterojunction indicates that the interface state also affects the rectifying property. Good rectifying property hasn＇t been observed in Si/NiO and Si/NiO ∶ Cu heterojunctions because of the appearance of more defects. These results are also evidenced by XRD,SEM,AFM and UV results.

关 键 词：NIO Na掺杂 CU掺杂 异质结 整流特性 

分 类 号：O484.4[理学—固体物理]