Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65 nm NMOSFETs  

作　　者：Qi-Wen Zheng Jiang-Wei Cui Ying Wei Xue-Feng Yu Wu Lu Diyuan Ren Qi Guo 郑齐文;崔江维;魏莹;余学峰;陆妩;任迪远;郭旗(Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011;Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011)

机构地区：[1]Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011 [2]Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011

出　　处：《Chinese Physics Letters》2018年第4期74-77,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 11605282,11505282 and U1532261;the West Light Foundation of the Chinese Academy of Sciences under Grant No 2015-XBQN-B-15

摘　　要：The bias dependence of radiation-induced narrow-width channel effects（RINCEs） in 65-nm n-type metal-oxidesemiconductor field-effect transistors（NMOSFETs） is investigated. The threshold voltage of the narrow-width65 nm NMOSFET is negatively shifted by total ionizing dose irradiation, due to the RINCE. The experimental results show that the 65 nm narrow-channel NMOSFET has a larger threshold shift when the gate terminal is kept in the ground, which is contrary to the conclusion obtained in the old generation devices. Depending on the three-dimensional simulation, we conclude that electric field distribution alteration caused by shallow trench isolation scaling is responsible for the anomalous RINCE bias dependence in 65 nm technology.The bias dependence of radiation-induced narrow-width channel effects（RINCEs） in 65-nm n-type metal-oxidesemiconductor field-effect transistors（NMOSFETs） is investigated. The threshold voltage of the narrow-width65 nm NMOSFET is negatively shifted by total ionizing dose irradiation, due to the RINCE. The experimental results show that the 65 nm narrow-channel NMOSFET has a larger threshold shift when the gate terminal is kept in the ground, which is contrary to the conclusion obtained in the old generation devices. Depending on the three-dimensional simulation, we conclude that electric field distribution alteration caused by shallow trench isolation scaling is responsible for the anomalous RINCE bias dependence in 65 nm technology.

关 键 词：Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65 nm NMOSFETs 

分 类 号：TN386[电子电信—物理电子学]