Nonvolatile Resistive Switching and Physical Mechanism in LaCrO3 Thin Films  

作　　者：Wan-Jing Hu Ling Hu Ren-Huai Wei Xian-Wu Tang Wen-Hai Song Jian-Ming Dai Xue-Bin Zhu Yu-Ping Sun 胡万景;胡令;魏仁怀;汤现武;宋文海;戴建明;朱雪斌;孙玉平(Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031;University of Science and Technology of China, Hefei 230026;High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031;Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093)

机构地区：[1]Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 [2]University of Science and Technology of China, Hefei 230026 [3]High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031 [4]Collaborative Innovation Center of Advanced Microstructufes, Nanjing University, Nanjing 210093

出　　处：《Chinese Physics Letters》2018年第4期98-102,共5页中国物理快报（英文版）

基　　金：Supported by the Joint Funds of the National Natural Science Foundation of China and the Chinese Academy of Sciences’Large-Scale Scientific Facility under Grant No U1532149;the National Basic Research Program of China under Grant No2014CB931704

摘　　要：Polycrystalline LaCrO3（LCO） thin films are deposited on Pt/Ti/SiO2/Si substrates by pulsed laser deposition and used as the switching material to construct resistive random access memory devices. The unipolar resistive switching（RS） behavior in the Au/LCO/Pt devices exhibits a high resistance ratio of ~104 between the high resistance state（HRS） and low resistance state（LRS） and exhibits excellent endurance/retention characteristics.The conduction mechanism of the HRS in the high voltage range is dominated by the Schottky emission, while the Ohmic conduction dictates the LRS and the low voltage range of HRS. The RS behavior in the Au/LCO/Pt devices can be understood by the formation and rupture of conducting filaments consisting of oxygen vacancies,which is validated by the temperature dependence of resistance and x-ray photoelectron spectroscopy results.Further analysis shows that the reset current IR and reset power PR in the reset processes exhibit a scaling law with the resistance in LRS（R0）, which indicates that the Joule heating effect plays an essential role in the RS behavior of the Au/LCO/Pt devices.Polycrystalline LaCrO3（LCO） thin films are deposited on Pt/Ti/SiO2/Si substrates by pulsed laser deposition and used as the switching material to construct resistive random access memory devices. The unipolar resistive switching（RS） behavior in the Au/LCO/Pt devices exhibits a high resistance ratio of ~104 between the high resistance state（HRS） and low resistance state（LRS） and exhibits excellent endurance/retention characteristics.The conduction mechanism of the HRS in the high voltage range is dominated by the Schottky emission, while the Ohmic conduction dictates the LRS and the low voltage range of HRS. The RS behavior in the Au/LCO/Pt devices can be understood by the formation and rupture of conducting filaments consisting of oxygen vacancies,which is validated by the temperature dependence of resistance and x-ray photoelectron spectroscopy results.Further analysis shows that the reset current IR and reset power PR in the reset processes exhibit a scaling law with the resistance in LRS（R0）, which indicates that the Joule heating effect plays an essential role in the RS behavior of the Au/LCO/Pt devices.

关 键 词：La Cr HRS LRS PT Nonvolatile Resistive Switching and Physical Mechanism in LaCrO3 Thin Films 

分 类 号：O484[理学—固体物理]