Bi的A位掺杂对CaCu3Ti4O12陶瓷电性能的影响  

Influence of A-site Bi-doping on Electric Properties of CaCu3Ti4O12

作　　者：徐玲芳[1] 张宇 毛聪 杨昌平[1] XU Lingfang;ZHANG Yu;MAO Cong;YANG Changping(Faculty of Physics and Electronic Technology, Hubei University, Wuhan 430062, Chin)

机构地区：[1]湖北大学物理与电子科学学院

出　　处：《中国陶瓷》2018年第6期36-39,共4页China Ceramics

基　　金：国家自然科学基金项目(51402094)

摘　　要：采用传统固相法制备了Bi掺杂CaCu3Ti4O12陶瓷。采用X射线衍射分析了样品的相结构,采用介电温谱和Ⅰ-Ⅴ曲线研究了其介电和非线性特性。结果表明,Bi掺杂CaCu3Ti4O12陶瓷均为立方相类钙钛矿结构。Bi的A位掺杂在保持陶瓷较高介电常数的同时使得其介电损耗有所降低,同时也导致非线性系数的降低,并认为晶粒晶界形成的阻挡层电容器结构对其巨介电特性及非线性行为有重要贡献。Bi-doped CaCu3Ti4O12 ceramics were fabricated by the traditional solid-state reaction method. The phase structure was identified by X-ray diffraction. The dielectric properties and nonlinear characteristics were analyzed by the dielectric spectra dependent on temperature and Ⅰ-Ⅴ curves respectively. As a result, all samples had pure cubic perovskite-related phase structure. The doped CaCu3Ti4O12 ceramics has relatively high dielectric constant and lower dielectric loss than pure CaCu3Ti4O12 ceramics. However, Bi-doping decreased the nonlinear coefficient. The internal barrier layer capacitor structure formed by the grain and grain boundary of CaCu3Ti4O12 ceramics should contribute significantly to the huge dielectric behavior as well as the nonlinear characteristics.

关 键 词：CaCu3Ti4O12陶瓷 掺杂 介电谱 非线性系数 

分 类 号：TQ174.758[化学工程—陶瓷工业]