Space-confined vapor deposition synthesis of two dimensional materials  

作　　者：Shasha Zhou Lin Gan Deli Wang Huiqiao Li Tianyou Zhai 

机构地区：[1]School of Materials Science and Engineering, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Wuhan 430074, China

出　　处：《Nano Research》2018年第6期2909-2931,共23页纳米研究（英文版）

摘　　要：Two dimensional （2D） nanomaterials are promising fundamental building blocks for use in the next-generation semiconductor industry due to their unique geometry and excellent （opto）-electronic properties. However, large scale high quality fabrication of 2D nanomaterials remains challenging. Thus, the development of controllable fabrication methods for 2D materials is essential for their future practical application. In this review, we will discuss the importance of the space-confined vapor deposition strategy in the controllable fabrication of 2D materials and summarize recent progress in the utilization of this strategy for the synthesis of novel materials or structures. Using this method, various high quality ultrathin 2D materials, including large-area graphene and boron nitride, ReS2/ReSe2 HfS2, pyramid-structured multilayer MoS2, and the topological insulators BiaSe3 and BiaTe3, have been successfully obtained. Additionally, by utilizing van der Waals epitaxy growth substrates such as mica or other 2D materials, patterned growth of 2D nanomaterials can be easily achieved via a surface-induced growth mechanism. Finally, we provide a short prospect for future development of this strategy.Two dimensional （2D） nanomaterials are promising fundamental building blocks for use in the next-generation semiconductor industry due to their unique geometry and excellent （opto）-electronic properties. However, large scale high quality fabrication of 2D nanomaterials remains challenging. Thus, the development of controllable fabrication methods for 2D materials is essential for their future practical application. In this review, we will discuss the importance of the space-confined vapor deposition strategy in the controllable fabrication of 2D materials and summarize recent progress in the utilization of this strategy for the synthesis of novel materials or structures. Using this method, various high quality ultrathin 2D materials, including large-area graphene and boron nitride, ReS2/ReSe2 HfS2, pyramid-structured multilayer MoS2, and the topological insulators BiaSe3 and BiaTe3, have been successfully obtained. Additionally, by utilizing van der Waals epitaxy growth substrates such as mica or other 2D materials, patterned growth of 2D nanomaterials can be easily achieved via a surface-induced growth mechanism. Finally, we provide a short prospect for future development of this strategy.

关 键 词：two dimensional vapor deposition space confinement transition metaldichalcogenides 

分 类 号：O484[理学—固体物理] TB301[理学—物理]