Fe_3Si基厚膜电阻的制备与电阻特性研究  

Preparation of Fe_3Si-Based Thick Film Resistor Paste and Study on Resistance Characteristics

作　　者：庞博 黄晋 李娟 谢泉 Pang Bo;Huang Jin;Li Juan;Xie Quart(College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China)

机构地区：[1]贵州大学大数据与信息工程学院,贵阳550025

出　　处：《电子器件》2018年第3期565-571,共7页Chinese Journal of Electron Devices

基　　金：国家自然科学基金项目(61264004);贵州省高层次创新型人才培养项目;贵州省国际科技合作项目(黔科合外G字[2012]7004;[2013]7003);贵州省科技厅;贵州大学联合资金项目(黔科合LH字[2014]7610)

摘　　要：采用传统固相合成法制备Fe_3Si粉体,用作厚膜电阻的功能相,并用玻璃粉作为无机粘接相制备Fe_3Si基厚膜电阻浆料。运用正交试验方法研究了浆料中玻璃粉含量、固含量对Fe_3Si基厚膜电阻电学性能的影响。结果表明:浆料中粉料与有机载体的比例对其方阻影响最大,并且当浆料中固含量为69%wt^81%wt时,厚膜电阻的方阻变化范围为37 kΩ/□~200 kΩ/□;当固含量为75wt%、玻璃粉含量为45%时厚膜电阻的方阻最小。The functional phase Fe3Si powder was prepared by the traditional solid phase synthesis method and Fe3Si-based thick film resistor paste was prepared by using glass powder as inorganic binder. The effects of the content of the glass powder and solid content in the slurry on the electrical properties of Fe3Si-based thick film were investigated by orthogonal test. The results showed that the ratio of powder to organic carrier has the greatest influence on the square resistance,and when the solid content is 69% wt - 81% wt,the resistance range of the thick film resistance is 37 kΩ/□ - 200 kΩ/□,when the solid content is 75 wt%,the glass powder content is 45%,thick film resistor resistance minimum.

关 键 词：FE3SI 厚膜电阻浆料 正交实验法 玻璃粉 固含量 

分 类 号：TN452[电子电信—微电子学与固体电子学]