Micro-plasma noise of 30 krad gamma irradiation broken-down GaN-based LED  

Micro-plasma noise of 30 krad gamma irradiation broken-down GaN-based LED

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作  者:Yu'an Liu Wenlang Luo 

机构地区:[1]Key Laboratory for Watershed Ecology and Geographical Environment Monitoring, National Administration of Surveying Mapping and Geo-Information, Jinggangshan University

出  处:《Journal of Semiconductors》2018年第7期88-91,共4页半导体学报(英文版)

基  金:Project supported by the Education Department Science and Technology Foundation of Jiangxi Province(No.GJJ160743);the Doctoral Research Start-Up Foundation of Jinggangshan University(No.JZB15001)

摘  要:A correlation model between micro plasma noise and gamma irradiation of GaN-based LED is built.The reverse bias I-V characteristics and micro-plasma noise were measured in it, before and after Gamma irradiation. It is found that even after 30 krad Gamma irradiation, the GaN-based LED has soft breakdown failure. The reverse soft breakdown region current local instability of this device before irradiation is analyzed by the microplasma noise method. The results were obtained that if the GaN-based LED contained micro-plasma defects, it will fail after low doses(30 krad) of gamma irradiation. The results clearly reflect the micro-plasma defects induced carriers fluctuation noise and the local instability of GaN-based LED reverse bias current.A correlation model between micro plasma noise and gamma irradiation of GaN-based LED is built.The reverse bias I-V characteristics and micro-plasma noise were measured in it, before and after Gamma irradiation. It is found that even after 30 krad Gamma irradiation, the GaN-based LED has soft breakdown failure. The reverse soft breakdown region current local instability of this device before irradiation is analyzed by the microplasma noise method. The results were obtained that if the GaN-based LED contained micro-plasma defects, it will fail after low doses(30 krad) of gamma irradiation. The results clearly reflect the micro-plasma defects induced carriers fluctuation noise and the local instability of GaN-based LED reverse bias current.

关 键 词:gamma irradiation GaN-based LED micro-plasma noise 

分 类 号:O53[理学—等离子体物理]

 

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