10 GΩ在片高值电阻溯源实验  

Traceability Experiments on 10 GΩ On-wafer High Resistance

作　　者：刘岩[1] 乔玉娥[1] 丁晨[1] 梁法国[1] LIU Yan;QIAO Yu-e;DING Chen;LIANG Fa-guo(The 13th Research Institute, CETC, Shijiazhuang, Hebei 050051, China)

机构地区：[1]中国电子科技集团公司第十三研究所,河北石家庄050051

出　　处：《计量学报》2018年第4期545-548,共4页Acta Metrologica Sinica

摘　　要：为解决在片高值电阻参数的溯源问题,组建了一套可溯源的在片高值电阻测量系统,并提出针对该系统的量值溯源方案,实现了在片高值电阻到常规同轴形式标准高值电阻的溯源。组件的测量系统通过额外的探针和线缆将同轴形式的标准电阻器接口延伸至探针末端,使用在片直通对接线将对应探针短接,形成同轴-在片-同轴形式的测量回路,从而将在片测量值与同轴端测量值联系起来,同时给出了保守的不确定度评估方法。使用组建的测量系统进行在片高值电阻溯源实验,实验数据显示在10 GΩ点的相对扩展不确定度为0.3%(k=2)。A modified on-wafer high resistance measuring system, along with customized trace-back method, is developed to fulfill the traceability requirements. On-wafer high resistance is successfully traced back to a standard resistor with the system. The system is equipped with extra probes and leads in order to extend the ports of the resistor standard to the tips of the probes and on-wafer thru lines are used to short the corresponding probes. Thus a circuit taking a Lead-On- wafer-Lead form is build to connect on-wafer measurement with a resistor standard. A conservative method is given to evaluate the uncertainty of the proposed system. Experiments on traceability are taken, and the uncertainty of the system achieved 0.3% （k =2） at 10GΩ.

关 键 词：计量学 高值电阻 在片测量 溯源 

分 类 号：TB971[一般工业技术—计量学]