Ultraviolet/ozone and oxygen plasma treatments for improving the contact of carbon nanotube thin film transistors  

作　　者：Qi Huang Jiye Xia Jie Zhao Guodong Dong Fang Liu Hu Meng Xuelei Liang 

机构地区：[1]Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics,Peking University,Beijing 100871,China [2]BOE Technology Group Co.,Ltd.,Beijing 100176,China

出　　处：《Science Bulletin》2018年第12期802-806,共5页科学通报（英文版）

基　　金：supported by the National Key Research and Development Program of China(2016YFA0201902);the National Natural Science Foundation of China(61621061);Beijing Municipal Science&Technology Commission(Z171100002017001)

摘　　要：Carbon nanotube thin film transistor （CNT-TFF） is an emerging technology for future macroelectronics, such as chemical and biological sensors, optical detectors, and the backplane driving circuits for flat panel displays. The mostly reported fabrication method of CNT-TFT is a lift-off based photolithography process. In such fabrication process, photoresist （PR） residue contaminates the interface of tube-metal contact and deteriorates the device performance. In this paper, ultraviolet ozone （UVO） and oxygen plasma treat- ments were employed to remove the PR contamination. Through our well-designed experiments, the UVO treatment is confirmed an effective way of cleaning contamination at the tube-metal interface, while oxygen plasma treatment is too reactive and hard to control, which is not appropriate for CNT-TFTs. It is determined that 2-6 rain UVO treatment is the preferred window, and the best optimized treatment time is 4 rain, which leads to 15% enhancement of device performance.Carbon nanotube thin film transistor(CNT-TFT) is an emerging technology for future macroelectronics,such as chemical and biological sensors,optical detectors,and the backplane driving circuits for flat panel displays.The mostly reported fabrication method of CNT-TFT is a lift-off based photolithography process.In such fabrication process,photoresist(PR) residue contaminates the interface of tube-metal contact and deteriorates the device performance.In this paper,ultraviolet ozone(UVO) and oxygen plasma treatments were employed to remove the PR contamination.Through our well-designed experiments,the UVO treatment is confirmed an effective way of cleaning contamination at the tube-metal interface,while oxygen plasma treatment is too reactive and hard to control,which is not appropriate for CNT-TFTs.It is determined that 2–6 min UVO treatment is the preferred window,and the best optimized treatment time is 4 min,which leads to 15% enhancement of device performance.

关 键 词：Carbon nanotube Thin film transistor Contact UVO Oxygen plasma 

分 类 号：TN321.5[电子电信—物理电子学]