Si替代β-Si_3N_4对合成β-sialon荧光粉性能的影响  

Effect of Si-substituting β-Si_3N_4 on Properties of Synthetic β-sialon Phosphors

作　　者：刘凯 黎秋航 梁超 何锦华 LIU Kai;LI Qiuhang;LIANG Chao;HE Jinhua(Jiangsu Bree Optronics Co., Ltd., Nanjing 211103, China)

机构地区：[1]江苏博睿光电有限公司,江苏南京211003

出　　处：《中国照明电器》2018年第6期33-36,共4页China Light & Lighting

摘　　要：以β-Si_3N_4、AlN、Al_2O_3、Eu_2O_3为原料,在氮气气氛中,通过高温高压方法合成Eu掺杂β-sialon荧光粉。通过Si替代β-Si_3N_4作为Si源,在氮气气氛中生成氮化硅,研究不同硅源对β-sialon荧光粉性能的影响。利用XRD和SEM分别对获得样品的晶体结构和微观形貌进行测试分析,使用荧光分光光度计对样品的激发光谱和发射光谱进行分析。Si源的不同对β-sialon荧光粉的晶体结构和颗粒形貌没有明显的影响,但由于氮化效果的不同,使用Si替代β-Si_3N_4合成导致荧光粉亮度下降。Eu doped β-sialon phosphors were synthesized by high temperature and high pressure in a nitrogen atmosphere,using β-Si3N4,AlN,Al2O3 and Eu2O3 as raw materials. Instead of β-Si3N4,Si was used as a Si-source to produce silicon nitride in a nitrogen atmosphere. The effects of the performance of β-sialon phosphors with different silicon sources were investigated. The crystal structure and micro-morphology of the obtained samples were analyzed by using the XRD and SEM,respectively.The excitation spectra and emission spectra of the samples were analyzed using a fluorescence spectrophotometer. The influences of on the crystal structure and particle morphology of β-sialon phosphors with different Si-sources are unobvious. However,due to the different nitridation effects by using Si instead of β-Si3N4,the brightness of the phosphor was decreased with the increasing of Sisubstitution.

关 键 词：β-sialon荧光粉 Β-SI3N4 Si替代 氮化 高温高压法 

分 类 号：TQ422[化学工程]