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作 者:Wei-Jun Wan Wei Ren Xiao-Ran Meng Yun-Xia Ping Xing Wei Zhong-Ying Xue Wen-Jie Yu Miao Zhang Zeng-Feng Di Bo Zhang 万伟俊;任伟;孟骁然;平云霞;魏星;薛忠营;俞文杰;张苗;狄增峰;张波(Physics Department, Materials Genome Institute, and International Centre for Quantum and Molecular Structures,Shanghai University;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences;School of Mathematics, Physics and Statistics, Shanghai University of Engineering Science)
机构地区:[1]Physics Department,Materials Genome Institute,and International Centre for Quantum and Molecular Structures Shanghai University,Shanghai 200444 [2]State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050 [3]School of Mathematics,Physics and Statistics,Shanghai University of Engineering Science,Shanghai 201600
出 处:《Chinese Physics Letters》2018年第5期95-98,共4页中国物理快报(英文版)
基 金:Supported by the National Natural Science Foundation of China under Grant Nos 51672171 and 61604094;the Natural Science Foundation of Shanghai under Grant No 14ZR1418300;the National Key Basic Research Program of China under Grant No 2015CB921600;the Eastern Scholar Program from the Shanghai Municipal Education Commission;the Fok Ying Tung Education Foundation
摘 要:We report an effective method to improve the formation of nickel stanogermanide(Ni Ge Sn) by the incorporation of a platinum(Pt) interlayer. After the Ni/Pt/Ge Sn samples are annealed we obtain uniform Ni Ge Sn thin films,which are characterized by means of sheet resistance, atomic force microscopy, scanning electron microscopy,cross-section transmission electron microscopy, and energy dispersive x-ray spectroscopy. These results show that the presence of Pt increases the smoothness and uniform morphology of Ni Ge Sn films.We report an effective method to improve the formation of nickel stanogermanide(Ni Ge Sn) by the incorporation of a platinum(Pt) interlayer. After the Ni/Pt/Ge Sn samples are annealed we obtain uniform Ni Ge Sn thin films,which are characterized by means of sheet resistance, atomic force microscopy, scanning electron microscopy,cross-section transmission electron microscopy, and energy dispersive x-ray spectroscopy. These results show that the presence of Pt increases the smoothness and uniform morphology of Ni Ge Sn films.
关 键 词:In Pt Sn Improvement of Nickel-Stanogermanide Contact Properties by Platinum Interlayer
分 类 号:TN304[电子电信—物理电子学]
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