Buffer-modified C_(60)/pentacene as organic charge generation layer based on Al and MoO_3  

作　　者：WANG Zhen LIU Fei CHEN Ai XIE Jia-feng CHEN Wei-zhong 王振;柳菲;陈爱;谢嘉凤;陈伟中(School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications)

机构地区：School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China

出　　处：《Optoelectronics Letters》2018年第4期286-290,共5页光电子快报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.61604027);the Basic and Advanced Technology Research Project of Chongqing Municipality(Nos.cstc2016jcyj A0272 and cstc2016jcyj A2063);the Scientific and Technological Research Foundation of Chongqing Municipal Education Commission(Nos.KJ1500424 and KJ1600418);the Youth Natural Science Foundation of Chongqing University of Posts and Telecommunications(No.A2013-39)

摘　　要：We demonstrate tandem organic light-emitting diodes(TOLEDs) with excellent performance using Al and MoO_3 buffer-modified C_(60)/pentacene as charge generation layer(CGL). Al and MoO_3 were used as the electron and hole injection layers of C_(60)/pentacene CGL, respectively. Green phosphorescence TOLEDs with the structure of ITO/NPB/m CP:Ir(ppy)_3/TPBi/Al/C_(60)/pentacene/MoO_3/NPB/m CP:Ir(ppy)_3/TPBi/Cs_2CO_3/Al were fabricated. The results show that the inserted Al and MoO_3 can effectively increase the charge injection capacity of organic CGL, resulting the improvement of luminance and current efficiency of TOLEDs. The turn-on voltage of TOLEDs is much lower than that of single-unit device, and the current efficiency is more than 2 times larger than that of the single-unit device. TOLEDs can exhibit excellent photoelectric performance when the thicknesses of Al, C_(60), pentacene and MoO_3 are 3 nm, 15 nm, 25 nm and 1 nm, respectively. The maximum luminance and current efficiency are 7 920.0 cd/m^2 and 16.4 cd/A, respectively. This work is significant to build new CGL structures for realizing high-performance TOLEDs.

关 键 词：MOO3 缓冲区 器官 修改 费用 注射能力 CGL 发光性 

分 类 号：TN383.1[电子电信—物理电子学]