Fabrication and Characteristics of Nano-Floating Gate Memories with ZnO Nano-Crystals as Charge-Storage Layer  

作　　者：Lu Liu Yong Su Jing-Ping Xu Yi-Xian Zhang 刘璐;苏勇;徐静平;张贻贤(School of Optical and Electronic Information, Huazhong University of Science and Technology)

机构地区：[1]School of Optical and Electronic Information, Huazhong University of Science and Technology

出　　处：《Chinese Physics Letters》2018年第6期102-105,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 61404055

摘　　要：Nano-floating gate memory devices with ZnO nano-crystals as charge storage layers are fabricated,and the influence of post-deposition annealing temperature and thickness of the ZnO layer are investigated.Atomic force microscopy and scanning electron microscopy reveal the morphology of discrete ZnO nano-crystals.For capacitance-voltage measurements,it is found that the memory device with 1.5 nm ZnO and annealed at 700℃shows a larger memory window of 4.3 V（at±6 V）and better retention characteristics than memoriy devices with2.5 nm ZnO or annealed at other temperatures.These results indicate that the nano-floating gate memory with ZnO nano-crystals can obtain good trade-off memory properties.Nano-floating gate memory devices with ZnO nano-crystals as charge storage layers are fabricated,and the influence of post-deposition annealing temperature and thickness of the ZnO layer are investigated.Atomic force microscopy and scanning electron microscopy reveal the morphology of discrete ZnO nano-crystals.For capacitance-voltage measurements,it is found that the memory device with 1.5 nm ZnO and annealed at 700℃shows a larger memory window of 4.3 V（at±6 V）and better retention characteristics than memoriy devices with2.5 nm ZnO or annealed at other temperatures.These results indicate that the nano-floating gate memory with ZnO nano-crystals can obtain good trade-off memory properties.

关 键 词：ZNO Fabrication and Characteristics of Nano-Floating Gate Memories with ZnO Nano-Crystals as Charge-Storage Layer 

分 类 号：TB383[一般工业技术—材料科学与工程] O4[理学—物理]