An Efficiency Enhanced Graphene/n-Si Schottky Junction for Solar Cells  

作　　者：李刚 程宏伟 郭丽芳 王开鹰 程再军 

机构地区：[1]MicroNano System Research Center, College of Information and Computer & Key Lab of Advanced Transducers and Intelligent Control System of Ministry of Education, Taiyuan University of Technology, Taiyuan 030024 [2]School of Optoelectronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024

出　　处：《Chinese Physics Letters》2018年第7期58-61,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 61504113,61674113 and 51622507;the Natural Science Foundation of Shanxi Province under Grant No 2016011040;the Natural Science Foundation of Fujian Province under Grant No 2018J01567;the Scientific and Technological Innovation Programs of Higher Education Institutions in Shanxi Province under Grant No 2016138

摘　　要：A novel and facile oxidation-induced self-doping process of graphene-silicon Schottky junction by nitric acid（HNO3） vapor is reported. The HNO3 oxidation process makes graphene p-type self-doped, and leads to a higher built-in potential and conductivity to enhance charge transfer and to suppress charge carrier recombination at the graphene-silicon Schottky junction. After the HNO3 oxidation process, the open-circuit voltage is increased from the initial value of 0.36 V to the maximum value of 0.47 V, the short-circuit current is greatly increased from 0.80μA to 7.71μA, and the ideality factor is optimized from 4.4 to 1.0. The enhancement of the performance of graphene-Si solar cells may be due to oxidation-induced p-type self-doping of graphene-Si junctions.A novel and facile oxidation-induced self-doping process of graphene-silicon Schottky junction by nitric acid（HNO3） vapor is reported. The HNO3 oxidation process makes graphene p-type self-doped, and leads to a higher built-in potential and conductivity to enhance charge transfer and to suppress charge carrier recombination at the graphene-silicon Schottky junction. After the HNO3 oxidation process, the open-circuit voltage is increased from the initial value of 0.36 V to the maximum value of 0.47 V, the short-circuit current is greatly increased from 0.80μA to 7.71μA, and the ideality factor is optimized from 4.4 to 1.0. The enhancement of the performance of graphene-Si solar cells may be due to oxidation-induced p-type self-doping of graphene-Si junctions.

分 类 号：TM914.4[电气工程—电力电子与电力传动] TQ245.12[化学工程—有机化工]