Transport Studies on GaAs/AlGaAs Two-Dimensional Electron Systems Modulated by Triangular Array of Antidots  

作　　者：杨楚宏 郑树玉 樊洁 景秀年 姬忠庆 刘广同 杨昌黎 吕力 

机构地区：[1]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 [2]University of Chinese Academy of Sciences, Beijing 100049 [3]Collaborative Innovation Center of Quantum Matter, Beijing 100871

出　　处：《Chinese Physics Letters》2018年第7期85-89,共5页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Program of China under Grant Nos 2015CB921101 and 2014CB920904;the Strategic Priority Research Program B of Chinese Academy of Sciences under Grant No XDB07010200

摘　　要：Triangular antidot lattices of various periods and aspect ratios are fabricated on high mobility GaAs/AlGaAs two-dimensional electron systems（2DESs）,and are characterized by magneto-transport measurements at low temperatures down to 300 mK. Commensurability peaks are generally observed in the magneto-resistivity ρ（xx）,and remarkable similarity between dρ（xy）/dB and ρ（xx） is found. In samples of relatively large aspect ratio d/a, the Aharonov-Bohm-type oscillations are clearly observed in both ρ（xx） and ρ（xy）, as well as the quenching of the Hall resistivity ρ（xy） in the vicinity of B = 0. These observations evince the good quality of our samples, and attest to the adequate preparation for fabricating antidot lattices of a reduced period to realize artificial graphene from GaAs/AlGaAs 2DESs.Triangular antidot lattices of various periods and aspect ratios are fabricated on high mobility GaAs/AlGaAs two-dimensional electron systems（2DESs）,and are characterized by magneto-transport measurements at low temperatures down to 300 mK. Commensurability peaks are generally observed in the magneto-resistivity ρ（xx）,and remarkable similarity between dρ（xy）/dB and ρ（xx） is found. In samples of relatively large aspect ratio d/a, the Aharonov-Bohm-type oscillations are clearly observed in both ρ（xx） and ρ（xy）, as well as the quenching of the Hall resistivity ρ（xy） in the vicinity of B = 0. These observations evince the good quality of our samples, and attest to the adequate preparation for fabricating antidot lattices of a reduced period to realize artificial graphene from GaAs/AlGaAs 2DESs.

分 类 号：TB30[一般工业技术—材料科学与工程]