Wavelength Extended InGaAsBi Detectors with Temperature-Insensitive Cutoff Wavelength  

作　　者：杜奔 顾溢 张永刚 陈星佑 马英杰 师艳辉 张见 

机构地区：[1]State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 [2]University of Chinese Academy of Sciences, Beijing 100049

出　　处：《Chinese Physics Letters》2018年第7期126-129,共4页中国物理快报（英文版）

基　　金：Supported by the National Key Research and Development Program of China under Grant No 2016YFB0402400;the National Basic Research Program of China under Grant No 2014CB643900;the National Natural Science Foundation of China under Grant Nos 61775228,61605232,61675225 and 61334004;the Shanghai Rising-Star Program under Grant No 17QA1404900

摘　　要：We demonstrate a wavelength extended InGaAsBi short-wave infrared photodetector on an InP substrate with the 50% cutoff wavelength up to 2.63μm at room temperature. The moderate growth temperature is applied to balance the Bi incorporation and material quality. Photoluminescence and x-ray diffraction reciprocal space mapping measurements reveal the contents of bismuth and indium in InGaAsBi to be about 2.7% and 76%,respectively. The InGaAsBi detector shows the temperature-insensitive cutoff wavelength with a low coefficient of about 0.96 nm/K. The demonstration indicates the InP-based InGaAsBi material is a promising candidate for wavelength extended short-wave infrared detectors working.We demonstrate a wavelength extended InGaAsBi short-wave infrared photodetector on an InP substrate with the 50% cutoff wavelength up to 2.63μm at room temperature. The moderate growth temperature is applied to balance the Bi incorporation and material quality. Photoluminescence and x-ray diffraction reciprocal space mapping measurements reveal the contents of bismuth and indium in InGaAsBi to be about 2.7% and 76%,respectively. The InGaAsBi detector shows the temperature-insensitive cutoff wavelength with a low coefficient of about 0.96 nm/K. The demonstration indicates the InP-based InGaAsBi material is a promising candidate for wavelength extended short-wave infrared detectors working.

分 类 号：TN36[电子电信—物理电子学]