基于金属有机气相沉积技术的集成光电互联技术  

Integrated optoelectronic interconnection technology based on Metal-Organic Chemical Vapor Deposition Technology(MOCVD)

作　　者：耿煜[1] 陈勖[1] 赖红[1] 李钦[1] 张运生[1] GENG Yu;CHEN Xu;LAI Hong;LI Qin;ZHANG Yunsheng(School of Software Engineering,Shenzhen Institute of Information Technology,Shenzhen Guangdong 518172,P.R.China)

机构地区：[1]深圳信息职业技术学院软件学院,广东深圳518172

出　　处：《深圳信息职业技术学院学报》2018年第2期63-67,共5页Journal of Shenzhen Institute of Information Technology

基　　金：深圳市科技计划资助项目(JCYJ20170306100015508)

摘　　要：随着集成电路中时钟速度和布线密度的增加,由于功率损耗和带宽限制,通过传统电线的芯片间和芯片内互连遇到越来越多的困难。光互连已被提议作为铜基互连的替代品,并且由于其具备大数据容量,高数据质量和低功耗等特点而被深入研究。Ⅲ-Ⅴ化合物半导体具有电子迁移率高、有效电子质量低和直接带隙的特点,这使得该材料系统对于高速光电子器件极其有利。在硅衬底上集成Ⅲ-Ⅴ光电子器件将提供硅基电子电路高集成度和大批量生产的综合优势,Ⅲ-Ⅴ器件卓越的电气和光学性能,为新一代混合集成电路的应用铺平道路。As clock speeds and wiring densities in integrated circuits increase, inter-chip and intra-chip interconnects through conventional wires encounter more and more difficulties due to power loss and bandwidth limitations. Optical interconnects have been proposed as an alternative to copper-based interconnects and are being studied in depth due to their large data capacity, high data quality and low power consumption. The Ⅲ-Ⅴ compound semiconductor has the characteristics of high electron mobility, low effective electron mass, and direct band gap, which makes the material system extremely advantageous for high-speed optoelectronic devices. The integration of Ⅲ-Ⅴ optoelectronic devices on silicon substrates will provide the combined advantages of high integration and mass production of silicon-based electronic circuits, as well as the superior electrical and optical performance of Ⅲ-Ⅴ devices, paving the way for a new generation of hybrid integrated circuits.

关 键 词：金属有机气相沉积 光互联 硅 

分 类 号：TN29[电子电信—物理电子学]