测量离子束横向截面的闪烁体屏的热分析  

Thermal effect of scintillation screens used for low energy deuterium ion beam profiling

作　　者：王小胡[1,2] 李嘉辉 杨振[3] 龙继东[3] 章林文[3] Wang Xiaohu;Li Jiahui;Yang Zhen;Long Jidong;Zhang Linwen(School of National Defense Science and Technology,Southwest University of Science and Technology Mianyang 621010,China;Institute of Fguid Physics,CAEP,P.O.Box 919 106,Mianyang 621900,China;Funclarnental Science on Nuclear Waste and Enwironrnental Security Laboratory,Southwest Uniwersity of Science and Technology,Mianyang 621010,China)

机构地区：[1]西南科技大学国防科技学院,四川绵阳621010 [2]西南科技大学核废物与环境安全国防重点学科实验室,四川绵阳621010 [3]中国工程物理研究院流体物理研究所,四川绵阳621900

出　　处：《强激光与粒子束》2018年第9期60-65,共6页High Power Laser and Particle Beams

基　　金：国家自然科学基金项目(11505147)

摘　　要：针对基于闪烁屏-CCD(电荷耦合元件)相机的氘离子束横向强度分布测量系统,利用ANSYS软件模拟计算了在直流及脉冲模式下,能量100keV、束斑直径3 mm氘离子轰击造成的Al_2O_3,SiO_2以及锗酸铋(BGO)三种候选闪烁体材料的表面温度变化。结果表明,在30μA的直流氘离子束轰击下,闪烁体表面温度随辐照时间急剧地升高。持续时间10 min的氘离子束轰击将使三种材料前表面的温度分别升高131,234和649℃。对于峰值流强30μA、重复频率1Hz、脉宽5μs的重复频率脉冲氘离子束,每个脉冲引起的三种闪烁屏表面的温度升高均小于0.05℃,且长时间的离子辐照基本不会造成闪烁屏的表面温度有明显的升高。对于脉宽5μs的单脉冲氘离子束,三种材料的表面温度均随离子流强近似呈线性地增加。在单脉冲模式下,Al_2O_3,SiO_2以及BGO闪烁屏能允许的最高离子流强分别为2.32,1.08和0.72A,超过此流强其表面温度将达到熔点。The neutron generator is widely used in the fields of oil logging and element on line analysis. The measurement of the transverse intensity distribution of the deuterium ion beam at the target position is of great significance to the improvement and optimization of the neutron generator. For Al2O3 , SiO2 and BGO scintillation screens used for transverse ion beam profile measurements, the temperature rises o（the materials caused by 100 keV and .3 mm in diameter deuterium ion beam radiation was calculated with ANSYS software. The results show that, for 30 μA DC deuterium ion beam, the surface temperatures of the scin tillation screens increased dramatically with the irradiation time. After a total irradiation time of 10 minutes, the surface tempera tures of the Al2O3, SiO2 and BGO screens had increased by 131 , 234 and 649 ℃ respectively. For pulsed ion beam with beam current of 30 μA, 1 Hz repetition rate and 5 μs pulse width, the temperature rise caused by a single beam pulse of the three scin tillation screens were all less than 0.05 ℃, and the average temperatures of the scintillation screens almost kept unchanged even for long time ion irradiation. For a single pulsed deuterium ion beam with a beam width of 5 ItS, the temperature change of the scintillation screens as the beam intensity varied was calculated. The results show that, the temperature of scintillation screens al most increased linearly with the beam current, and the maximum ion current aIIowcd for Al2O3, SiO2 and BGO scintillation screens was 2.32 A, 1.08 A and 0.72 A, respectively. For ion beam with current larger than the maximum allowed ion current, the surface temperature would reach the melting point of the materials.

关 键 词：离子束 束流截面 闪烁体 热效应 

分 类 号：TL81[核科学技术—核技术及应用]