一种用于TCXO芯片的带隙基准及过温保护电路设计  

A bandgap reference and over temperature protection circuit designed for TCXO chip

作　　者：谭传武[1] 陈卫兵[2] TAN Chuan-wu;CHEN Wei-bing(Dept.of Communication and signal,Hunan Railway Professional Technology College,Zhuzhou 412001,China;School of Computer and Communication,Hunan University of Technology,Zhuzhou 410008,China)

机构地区：[1]湖南铁道职业技术学院通信与信号学院,湖南株洲412001 [2]湖南工业大学计算机与通信学院,湖南株洲410008

出　　处：《电子设计工程》2018年第14期112-116,共5页Electronic Design Engineering

基　　金：湖南省教育厅科学研究项目(湘教通[2016]395;16B175)

摘　　要：基于Bi CMOS工艺设计低温漂、高电源抑制比的自偏置带隙基准电压源及过温保护复合电路。带隙基准采用自偏置电流源和差分运放一体化结构,过温保护电路用NPN管采集电流大小实现振荡器的起振或关断。仿真结果表明:带隙恒为1.24 V,温度在-40℃到125℃变化时,输出变化不超过0.78 m V,复合电路电源抑制比高达95 d B;超温关断时间0.071 s,迟滞开启时间0.064 s,复合电路能为TCXO芯片提供稳定的基准参考和较好的过温保护效果,有很大的实用价值。This article designed a bandgap voltage reference source with a low temperature drift,high power supply rejection ratio for the TCXO chips,and design the sensitive reaction of thermal protection circuit is used to protect TCXO chips. The structure of self-biased current source and differential operational amplifier is used in the bandgap reference,And the over temperature protection circuit controlled oscillator on or off by a NPN transistor to detection the circuit current. The simulation results show that the range of the voltage output is not more than 0.78 m V when the temperature changes at-40 to 125,The power supply rejection ratio in the circuit is as high as 95 d B;the oscillator is turned off When the temperature is greater than 150 degrees,and it＇s restart when the temperature is less than 130 degrees,time of turn off less than 0.071 s,and time of restart less than 0.064 s. The circuit can provide a stable reference reference and good temperature protection effect,which has great practical value for the TCXO chip.

关 键 词：带隙基准 过温保护 TCXO 

分 类 号：TN433[电子电信—微电子学与固体电子学]