1MV杆箍缩二极管辐射特性实验研究  

Experimental Study of Rod Pinch Diode as Radiography Source at 1MV

作　　者：耿力东[1] 谢卫平[1] 袁建强[1] 王敏华[1] 曹龙博 张思群[1] 赵小明[1] 何泱[1] GENG Lidong;XIE Weiping;YUAN Jianqiang;WANG Minhua;CAO Longbo;ZHANG Siqun;ZHAO Xiaoming;HE Yang(Key Laboratory of Pulsed Power,Institute of Fluid Physics,China Academy of Engineering Physics,Mianyang 621900,China)

机构地区：[1]中国工程物理研究院流体物理研究所脉冲功率科学与技术重点实验室,四川绵阳621900

出　　处：《原子能科学技术》2018年第8期1512-1518,共7页Atomic Energy Science and Technology

基　　金：国防科技基础项目资助(180326);国家自然科学基金青年科学基金资助项目(11605183)

摘　　要：依据现有的实验室驱动源能力建立杆箍缩二极管(RPD)粒子模拟计算模型,获得了工作电压为1 MV的RPD电参数特性及电子、离子时空分布特性,并设计了RPD实验装置。在1 MV驱动源平台上开展了实验研究,实验中采用B-dot、D-dot、热释光剂量片和SiPin二极管测试了RPD电流、电压、辐射剂量和光脉冲信号,分析了RPD电参数及X射线辐射特性。结果表明,阳极采用1.5 mm钨时,1 MV电压下1 m处辐射剂量约1 R,并得出剂量与电压Ud、电流Id的关系式D(R=1m)=120U1.55d∫Iddt;二极管阻抗范围为26.4~36.7Ω,空间电荷限制阶段平均阻抗下降率大于2Ω/ns,磁绝缘阶段平均阻抗下降率小于0.5Ω/ns;光脉冲宽度较电压脉冲宽度约缩短20%~30%,与电压、电流的关系为∝IdU1.55d。实验测试的剂量和光脉冲信号结果与拟合计算式计算结果符合较好。The rod pinch diode is a cylindrical pinched beam diode that provides an intense small diameter bremsstrahlung source for radiography.For this work,according to particle-in-cell results and the pulse power generator parameters,the 1 MV rod pinch diode was designed and studied experimentally.The experimental data were obtained on the 1 MV facility between 0.8 MV and 1 MV at 20 to 40 kA with 120 ns FWHM.The diode impedance behavior was studied.The average time rate of change of the diode impedance is less than 0.5Ω/ns at magnetically limited stage and more than 2Ω/ns at space charge limited stage.The diode impedance is between 26.4Ωand 36.7Ω.Thedose of 1 Rat 1 mis obtained with1.5 mm anode.Dose obtained by experiment can be fitted by voltage Udand current Idas D（R=1 m）=120 U1.55 d∫Iddt.The X-ray pulse width is proportional to IdU1.55 d.

关 键 词：杆箍缩二极管 闪光X射线源 粒子模拟 电子束 箍缩特性 

分 类 号：TL33[核科学技术—核技术及应用]