钨钼材料在蓝宝石单晶炉中的应用  

The Application of Tungsten and Molybdenum Materials in Sapphire Single Crystal Furnace

作　　者：廖彬彬[1] 魏修宇[1,2] Liao Binbin;Wei Xiuyu(Zhuzhou Cemented Carbide Group Corp.Ltd.,Zhuzhou Hunan 412000,China;State Key Laboratory for Cemented Carbide,Zhuzhou Hunan 412000,China)

机构地区：[1]株洲硬质合金集团有限公司,湖南株洲412000 [2]硬质合金国家重点实验室,湖南株洲412000

出　　处：《硬质合金》2018年第2期134-141,共8页Cemented Carbides

基　　金：国家重点研发计划资助(2017YFB0305600)

摘　　要：蓝宝石单晶由于具有良好的物理特性,在LED衬底、国防军工等领域具有广泛的应用。难熔金属钨钼材料熔点高,高温下饱和蒸气压很低,是制备蓝宝石单晶炉的关键材料。本文就钨钼材料在蓝宝石单晶炉中的应用领域、性能要求及制备方法进行了详细分析,并对其失效机理进行了探讨。蓝宝石单晶炉所使用的坩埚大部分是采用粉末冶金的压制烧结方法生产的钨坩埚和钼坩埚,也有少部分采用旋压法生产的薄壁坩埚;通过把钨杆弯折成一定的形状,用钨丝将纵向钨杆和横向钨杆固定,形成一个温度均匀的环境,保证生长出合格的单晶体;隔热屏一般采用多层薄钼片通过层间距5 mm的组合方式,实现良好隔热效果;最内层钼屏在真空高温环境下,有较快的挥发,造成钼屏变薄破损。Because of its wonderful physical properties, sapphire is widely used in LED substrate, national defense industry and other fields. Since refractory metals tungsten and molybdenum have high melting point and low saturated vapor pressure at high temperature, they are the key materials for preparing sapphire single crystal furnace. In this paper, the application field, performance requirements and preparation methods of tungsten and molybdenum materials in sapphire single crystal furnace are analyzed in detail, and their failure mechanism is discussed. Most crucibles used in sapphire crystal furnace are tungsten crucible and molybdenum crucible produced by powder metallurgy pressing sintering method,and a few sheet crucibles produced by spinning method are also used. Tungsten rods are bended to definite shapes and fixed with tungsten wire to form birdcage heater, which provides even temperature environment guaranteeing to grow qualified single crystals. Generally, the heat shield is made of multilayer thin molybdenum sheets with 5 mm spacing between each layer to achieve good insulation effect. The innermost molybdenum screen evaporates rapidly under vacuum and high temperature conditions, resulting in thinning of the molybdenum shield until damaged.

关 键 词：蓝宝石 单晶炉 坩埚 隔热屏 发热体 

分 类 号：TQ054[化学工程] TQ164.2