Optoelectronic properties of single-crystalline GaInAsSb quaternary alloy nanowires  

作　　者：李梦姿 陈新亮 李洪来 张学红 祁朝阳 王晓霞 范鹏 张清林 朱小莉 庄秀娟 

机构地区：[1]Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronic Science,Hunan University

出　　处：《Chinese Physics B》2018年第7期543-547,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.51525202,61505051,1137049,61474040,and 61635001);the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province,China;the Fundamental Research Funds for the Central Universities,China

摘　　要：Bandgap engineering of semiconductor nanomaterials is critical for their applications in nanoelectronics, opto- electronics, and photonics. Here we report, for the first time, the growth of single-crystalline quaternary alloyed Ga0.75In0.25As0.49Sb0.51 nanowires via a chemical-vapor-deposition method. The synthesized nanowires have a uniform composition distribution along the growth direction, with a zinc-blende structure. In the photoluminescence investigation, these quaternary alloyed semiconductor nanowires show a strong band edge light emission at 1950 nm （0.636 eV）. Photodetectors based on these alloy nanowires show a strong light response in the near-infrared region （980 nm） with the external quantum efficiency of 2.0 × 104% and the responsivity of 158 A/W. These novel near-infrared photodetectors may find promising applications in integrated infrared photodetection, information communication, and processing.Bandgap engineering of semiconductor nanomaterials is critical for their applications in nanoelectronics, opto- electronics, and photonics. Here we report, for the first time, the growth of single-crystalline quaternary alloyed Ga0.75In0.25As0.49Sb0.51 nanowires via a chemical-vapor-deposition method. The synthesized nanowires have a uniform composition distribution along the growth direction, with a zinc-blende structure. In the photoluminescence investigation, these quaternary alloyed semiconductor nanowires show a strong band edge light emission at 1950 nm （0.636 eV）. Photodetectors based on these alloy nanowires show a strong light response in the near-infrared region （980 nm） with the external quantum efficiency of 2.0 × 104% and the responsivity of 158 A/W. These novel near-infrared photodetectors may find promising applications in integrated infrared photodetection, information communication, and processing.

关 键 词：GalnAsSb nanowire quaternary alloy near-infrared photodetector 

分 类 号：TB383.1[一般工业技术—材料科学与工程] TG146.43[金属学及工艺—金属材料]