Active-Thermal-Tunable Terahertz Absorber with Temperature-Sensitive Material Thin Film  被引量:1

Active-Thermal-Tunable Terahertz Absorber with Temperature-Sensitive Material Thin Film

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作  者:Zhao Zhang Zhen Tian Chao Chang Xueguang Wang Xueqian Zhang Chunmei Ouyang Jianqiang Gu Jiaguang Han Weili Zhang 

机构地区:[1]Center for Terahertz Waves,College of Precision Instrument and Optoelectronics Engineering,and Key Laboratory of Opto-Electronics Information and Technology(Ministry of Education),Tianjin University,Tianjin 300072,China [2]Key Laboratory of Physical Electronics and Devices of the Ministry of Education,Xi'an Jiaotong University,Xi'an 710049,China [3]Hebei University of Engineering,Handan 056038,China [4]School of Electrical and Computer Engineering,Oklahoma State University,Stillwater,Oklahoma 74078,USA

出  处:《Nanotechnology and Precision Engineering》2018年第2期123-128,共6页纳米技术与精密工程(英文)

基  金:National Key Basic Research Program of China(Grant No.2014CB339800);National Science Foundation of China(Grant No.61675145,61722509,61422509,61605143,61420106006,61735012,51677145);Program for Changjiang Scholars and Innovative Research Team in University(IRT)(Grant No.13033);Hebei Province Science Foundation(Grant No.F2015402156 and F2014402094)

摘  要:It is shown that active-tunable terahertz absorbers can be realized in a sandwich-structured system comprising an ultrathin dielectric film(polyimide) on a temperature-sensitive substrate(InSb) with a metal film on the back by utilizing the intrinsic carrier density(N) variation in InSb. When increasing the temperature from 250 to 320 K, N in InSb varied from ~5.50×1015 to ~2.98×1016 cm–3. Fixing the thickness of dielectric film with the value of 1.37 μm, the absorption peak shifted from 1.41 to 3.29 THz while keeping absorption higher than 99%. This active tunability can respond to even a slight temperature perturbation, and shows polarization insensitivity as well as high tolerance of incidence-angle(absorption peak can still exceed 90% even the incidence angle reaches 60°). Besides, the refractive index of polyimide(PI) has thermal stability at the terahertz range and the merit of good workability. These characteristics guarantee the stability of activetunable performance. The peculiarities and innovations of this proposal promise a wide range of high efficiency terahertz devices, such as thermal sensors, spatial light modulators(SLMs) and so on.It is shown that active-tunable terahertz absorbers can be realized in a sandwich-structured system comprising an ultrathin dielectric film (polyimide) on a temperature-sensitive substrate (InSb) with a metal film on the back by utilizing the intrinsic carrier density (N) variation in InSb. When increasing the temperature from 250 to 320 K, N in InSb varied from ~5.50×1015 to ~2.98×1016cm–3. Fixing the thickness of dielectric flm with the value of 1.37 μm, the absorption peak shifed from 1.41 to 3.29 THz while keeping absorption higher than 99%. This active tunability can respond to even a slight temperature perturbation, and shows polarization insensitivity as well as high tolerance of incidence-angle (absorption peak can still exceed 90% even the incidence angle reaches 60°). Besides, the refractive index of polyimide (PI) has thermal stability at the terahertz range and the merit of good workability. Tese characteristics guarantee the stability of active-tunable performance. Te peculiarities and innovations of this proposal promise a wide range of high efciency terahertz devices, such as thermal sensors, spatial light modulators (SLMs) and so on.

关 键 词:Terahertz wave ABSORBER Thin film INSB 

分 类 号:TB4[一般工业技术]

 

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