一种适用于MLC闪存的CCI噪声均衡化算法  

CCI Noise Equalization Algorithm for MLC Flash Memory

作　　者：张旋[1,2] 周乐[2] 侯爱华 ZHANG Xuan1,2 ,ZHOU Le2, HOU Ai- hua1(1Xi＇an University of Technology,Xi＇an 710082,China;2Xidian University,Xi＇an 710071,Chin)

机构地区：[1]西安理工大学,西安710082 [2]西安电子科技大学,西安710071

出　　处：《计算机科学》2018年第B06期541-544,共4页Computer Science

基　　金：国家自然科学基金(61271004)资助

摘　　要：随着多级单元(Multi-Level Cell,MLC)闪存存储密度的增加,单元间干扰(Cell-to-Cell Interference,CCI)成为影响NAND闪存可靠性的主要噪声。在深入研究MLC闪存模型和CCI噪声模型的基础上,提出了一种MLC闪存的CCI噪声均衡化算法。该算法通过估计CCI干扰强度进而对感知MLC阈值电压进行补偿,可以更准确地读取MLC单元中存储的信息。仿真结果表明,在MLC闪存信道条件下,CCI噪声均衡化算法可以有效减少相邻状态的阈值电压交叉现象,有助于降低原始比特错误率,增强MLC闪存的可靠性。With the increase of MLC（Multi-Level Cell）flash memory density,CCI（Cell-to-Cell Interference）is the dominant noise source which affects the reliability of NAND flash memory.On the research of MLC flash memory model and CCI noise model,an equalization algorithm of CCI noise was proposed for MLC flash memory.This method compensates the sensed threshold voltage of MLC flash memory by estimating the CCI interference,so it is more accurate to read the information stored in MLC.The simulation results show that the CCI noise equalization algorithm can reduce the overlap of the adjacent threshold voltage distribution,which help to reduce the raw bit error rate and enhance the reliability of flash memory.

关 键 词：多级单元 单元间干扰 均衡化 

分 类 号：TP301.6[自动化与计算机技术—计算机系统结构]