CIS(CIGS)薄膜在乙醇中的一步电沉积制备  

CIS(CIGS) thin films prepared by one-step electrodeposition in alcohol solution

作　　者：杜晶晶[1] 赵军伟[1] 程晓民[1] 王可胜[1] DU Jing-jing;ZHAO Jun-wei;CHENG Xiao-min;WANG Ke-sheng(School of Mechanical Engineering ＆ Materials,Ningbo University of Technology,Ningbo Zhejiang 315016,China)

机构地区：[1]宁波工程学院机械工程学院与材料学院,浙江宁波315016

出　　处：《电源技术》2018年第6期849-851,共3页Chinese Journal of Power Sources

基　　金：国家自然科学基金(51275251)

摘　　要：利用一步电沉积法在乙醇溶液中制备出CIS和CIGS前驱体薄膜,并在氩气氛中进行550℃、30 min的热处理。采用X射线衍射(XRD)、扫描电镜(SEM)及自带能谱仪(EDS)对薄膜进行测试表征,并对电沉积CIS(CIGS)薄膜的机理进行了初步探讨。结果表明热处理后的薄膜物相纯净且结晶度高,表面致密、均匀,EDS分析表明所制备的CIGS薄膜为轻微贫铜膜,原子比[Ga]/([In]+[Ga])为0.24,分布在高效太阳电池所需比值范围内。The precursors of CIS and CIGS thin films were prepared by one-step electrodeposition in alcohol solution and then annealed in Ar atmosphere at 550 ℃ for 30 min. The films were characterized by X-ray diffraction（XRD）,scanning electron microscopy（SEM）, and energy-dispersive X-ray spectroscopy（EDS）, moreover the electrodeposition mechanism of CIS（CIGS） thin films was briefly discussed. The results showed that the annealed films had pure CIS（CIGS） phases with good crystallization, and the morphology of the films was very uniform and dense. The EDS results showed that the films composition was only slightly Cu-poor with respect to the anticipated composition of CIGS, the [Ga] to（[Ga]＋[In]） ratio for the CIGS film was 0.24, this ratio spanned the range necessary to achieve CIGS band gaps which was optimized for the terrestrial solar spectrum.

关 键 词：CIS(CIGS)薄膜 乙醇溶液 一步电沉积 热处理 

分 类 号：TM914.4[电气工程—电力电子与电力传动]