平面底栅型真空场发射三极管  

A Planar Vacuum Field Emission Triode with Bottom-Gate

作　　者：吴胜利[1] 龙铭刚 贾东波 张劲涛[1] 王晓[1] WU Sheng-li;LONG Ming-gang;JIA Dong-bo;ZHANG Jin-tao;WANG Xiao(Key Laboratory for Physical Electronics and Devices of the Ministry of Education,Xi′an Jiaotong University,Xi′an 710049,China)

机构地区：[1]西安交通大学电子物理与器件教育部重点实验室,陕西西安710049

出　　处：《真空电子技术》2018年第3期1-5,共5页Vacuum Electronics

基　　金：国家自然科学基金面上项目-纳米缝隙场发射真空晶体管结构与特性研究(项目编号:61771383)

摘　　要：真空场发射三极管(VFET)是一种真空微电子器件,采用纳米缝隙真空沟道实现电子的传输,兼具真空管和半导体晶体管的优点。本文介绍了国内外VFET的研究进展,提出了一种平面底栅型VFET结构,对其电子发射特性和栅极调制特性进行研究。结果表明,三极管真空沟道中的电子发射为场致电子发射,栅极具有调制作用。所制备的VFET可在0.1Pa条件下工作,如进一步减小真空沟道尺寸,有望实现大气环境下工作,展现出潜在的发展前景。Vacuum Field Emission Triode（VFET）is a kind of vacuum microelectronic device,in which electron transmission is realized in a nanoscale vacuum channel,thus VFET can combine the advantages of vacuum tube and semiconductor transistor.In this paper,the domestic and overseas research progress of VFET is introduced,and a planar VFET with bottom-gate is proposed.The electron emission characteristics and the gate control mechanism of VFET are investigated,the results indicate that the electron emission in the vacuum channel of VFET is field electron emission,and the gate control effect has been confirmed.The prepared VFET can now work under the condition of 0.1 Pa,and it is expected to work at the atmospheric pressure by further narrowing down the size of the vacuum channel.

关 键 词：真空场发射三极管 平面底栅结构 电子发射特性 栅极调控机理 

分 类 号：TN11[电子电信—物理电子学] TN48